Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Abstract

We report the low-temperature (250°C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current-voltage measurements showed a typical rectifying characteristic of a p-n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.

Effects of Annealing on Solution Processed n-ZTO/p-SiC Heterojunction

“…이종 접합 구조에서는 현재까지 Cd, Al을 ZnO에 첨가하 여 SiC와 접합한 다이오드 구조가 보고된 바 있다 [9,10]. 하지만 앞선 연구에서는 복잡한 공정과 낮은 온 전류 레벨로 인해 I On /I Off 가 저하되는 문제가 있 었다.…”

Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

“…It possesses many similar properties to the commercialized In x Ga 1-x N solid solution [9][10][11][12] and can have a huge potential for light-emission diodes (LED) applications [13]. Among the most important properties of Zn 1-x Cd x O one can note the tunable band-gap energy (from 3.26 to 2.88 eV) [14], high exciton localization energy (~160 meV) [15] and the isoelectronic nature of cadmium for zinc substitution in the cation sublattice [16].…”

“…Zn 1-x Cd x O ternary alloy, composed of zinc and cadmium oxides, at present is a much studied semiconductor system in optoelectronics [1][2][3][4][5][6][7][8]. It possesses many similar properties to the commercialized In x Ga 1-x N solid solution [9][10][11][12] and can have a huge potential for light-emission diodes (LED) applications [13].…”

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

“…[1][2][3][4] Since it is difficult to prepare stable p-type ZnO with high hole concentration, 5,6 researchers have grown n-ZnO nanostructures on other p-type substrates such as GaN, [6][7][8][9] SiC, [10][11][12] GaAs, 13,14 and NiO [15][16][17] to provide another way to realize ZnO based p-n heterojunctions. GaN has the same crystal structure (wurtzite) with a small in plane lattice mismatch (1.8%) with ZnO, which makes it as one of the best p-type candidate substrate to fabricate ZnO based heterojunction light emission diodes (LEDs).…”