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We report the fabrication and characterization of nanowire electromechanical switches consisting of chemical-vapour-deposition-grown silicon nanowires suspended over metal electrodes. The devices operate as transistors with the suspended part of the nanowire bent to touch metal electrodes via electromechanical force by applying voltage. The reversible switching, large on/off current ratio, small subthreshold slope and low switching energy compared to current CMOSFET make the switches very attractive for logic device application. In addition, we have developed a physical model to investigate the switching characteristics and extract the material properties.

In this paper, we demonstrated the feasibility of the Aerosol Deposition (AD) method which can be adapted as a future fabrication process for flexible electronic devices. On the basis of this method’s noticeable advantages such as room-temperature processing, suitability for mass production, wide material selectivity, and direct fabrication on a flexible substrate, we fabricated and evaluated a flexible conductive bridge random access memory (CBRAM) to confirm the feasibility of this method. The CBRAM was fabricated by the AD-method, and a novel film formation mechanism was observed and analyzed. Considering that the analyzed film formation mechanism is notably different with previously reported for film formation mechanisms of the AD method, these results of study will provide strong guidance for the fabrication of flexible electronic device on ductile substrate.