Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

Li, Qiliang; Koo, Sang‐Mo; Richter, Curt A.; Edelstein, Monica D.; Bonevich, John E.; Kopanski, Joseph J.; Suehle, John S.; Vogel, Eric M.

doi:10.1109/tnano.2007.891827

Cited by 59 publications

(56 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These layers with one dimension strictly restricted to a single layer are called two-dimensional (2D) material. The density of states for 2D materials, exhibits a quasi-continuous step-like increase with increasing excitation energy [78]. These changes in the density of states for exciting electrons alters the way excitation energy interacts with the valence electrons, thus changing the fundamental properties with size as well as shape in quantum confined nanomaterials.…”

Section: Two Dimensional (2d)mentioning

confidence: 99%

Recent development in 2D materials beyond graphene

Gupta

Thangavel

Seal

2015

Progress in Materials Science

1,280

747

View full text Add to dashboard Cite

Section: Two Dimensional (2d)mentioning

confidence: 99%

Recent development in 2D materials beyond graphene

Gupta

Thangavel

Seal

2015

Progress in Materials Science

1,280

747

View full text Add to dashboard Cite

“…We have developed a SNMS to precisely maneuver and align individual nanowires to form prototypical nanowire devices and test structures [11]. With this SNMS, individual nanowires can be picked up and transferred to a predefined location by electrostatic force.…”

Section: A Single Nanowire Manipulation System (Snms)mentioning

confidence: 99%

“…We present two fabrication approaches that can be used to form semiconductor nanowire devices: one based upon harvesting and positioning nanowires [11] and one based upon the direct growth of nanowires in predefined locations [12]. These approaches can be applied generically to nanowires of nominally any material, and they do not rely on deep submicrometer electron beam or projection lithography.…”

Section: Introductionmentioning

confidence: 99%

Metrology for the Electrical Characterization of Semiconductor Nanowires

Richter

Xiong

Zhu

et al. 2008

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Abstract-Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sublithographic features as well as a promising basis for future information processing technologies. New test structures and associated electrical measurement methods are the primary metrology needs necessary to enable the development, assessment, and adoption of emerging nanowire electronics. We describe two unique approaches to successfully fabricate nanowire devices: one based upon harvesting and positioning nanowires and one based upon the direct growth of nanowires in predefined locations. Test structures are fabricated and electronically characterized to probe the fundamental properties of chemical-vapor-deposition-grown silicon nanowires. Important information about current transport and fluctuations in materials and devices can be derived from noise measurements, and low-frequency 1/f noise has traditionally been utilized as a quality and reliability indicator for semiconductor devices. Both low-frequency 1/f noise and random telegraph signals are shown here to be powerful methods for probing trapping defects in nanoelectronic devices.

show abstract

“…Therefore, a variety of techniques have been utilised to manipulate and control electrodeposited nanowires suspended in a solvent including thermocapillary motion of nanowire suspensions in microchannels, 25,26 electrostatics, [26][27][28] electric field, 26,29,30 and magnetic field [31][32][33][34][35][36][37][38][39][40][41][42][43][44][45] assisted alignment. Recently, magnetic field have been utilized by several researchers to control assembly and alignment of carbon nanotubes, 26,40 Ni, [31][32][33][34][35] semiconductor, 26 conductive polymer 26 nanowires, as well as metallic nanowires such as gold, 37,39 bismuth, 42 coppertin, 41 Pt, 43 and ZnO (Ref.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field alignment of template released ferromagnetic nanowires

Sultan

Das

Mandal

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

A detailed investigation of magnetic field alignment of template released ferromagnetic nanowires has been undertaken. The distributions of magnetic field induced angular alignments of Ni0.8Fe0.2, Co, and Ni nanowires grown by electro-deposition and deposited onto substrates from a dilute suspension have been investigated as a function of magnetic field strengths up to ∼1 kOe. The nominal diameter of the nanowires investigated is either ∼200 nm (Ni0.8Fe0.2) or ∼300 nm (Co and Ni). The percentage of nanowires aligned within 0°–10° and 0°–20° of the applied field axis is observed to increase rapidly with increasing field strength up to ∼200 Oe, followed by a slower increase in alignment for the Ni0.8Fe0.2 and Ni wires and little improvement in alignment for the Co wires at higher fields. The proportion of aligned wires within 0°–20° is found to reach ∼82% for Ni0.8Fe0.2, ∼71% for Ni and only 53% for the Co nanowires using a magnetic field of 1 kOe. The influence of wire length upon the efficacy of magnetic alignment is investigated using Ni0.8Fe0.2 and Ni nanowires; this showed that the fractional alignment improved for longer nanowires.

show abstract

Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

Cited by 59 publications

References 19 publications

Recent development in 2D materials beyond graphene

Recent development in 2D materials beyond graphene

Metrology for the Electrical Characterization of Semiconductor Nanowires

Magnetic field alignment of template released ferromagnetic nanowires

Contact Info

Product

Resources

About