Abstract:Abstract:We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process.The ZTO/SiC heterojunction structures annealed at 500℃ show that I on /I off increases from ~5.13×10 7 to ~1.11×10 9 owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction ha… Show more
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