Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

Meneghini, Matteo; Meneghesso, G.; Trivellin, Nicola; Zanoni, Enrico; Orita, K.; Yuri, Masaaki; Ueda, Daisuke

doi:10.1109/led.2008.921098

Cited by 38 publications

(22 citation statements)

References 7 publications

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“…10 was calculated by evaluating the increment of the threshold current after 250 h of stress for four different aging temperatures. The obtained value for E a is around 258 meV, which is similar to the results of previous works [5,7,8].…”

Section: Effects Of Temperaturesupporting

confidence: 91%

“…As no change is expected after stress in the radiative and Auger coefficient rates [5], the results obtained in this work suggest that the most important consequence of stress is the increase of the nonradiative recombination rate. This coefficient is related to the concentration of trap states within the active layer, which is, therefore, supposed to increase during aging due to the generation/diffusion of defects or impurities, according to previous literature reports.…”

Section: Methodscontrasting

confidence: 41%

“…From this graph, it is possible to estimate the time of failure of the devices for different current levels at the same operating temperature. Figure 9 The kinetics of threshold current increase at fixed current level and different aging temperatures, dashed curves represent fit of the experimental data according to (5). Figure 10 Arrhenius plot for the increment of threshold current at different junction temperatures.…”

Section: Effects Of Driving Current and Opticalmentioning

confidence: 99%

See 2 more Smart Citations

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Marioli

Meneghini

Rossi

et al. 2015

Physica Status Solidi (a)

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This paper presents a detailed analysis of the degradation kinetics and of the reliability of state-of-the-art InGaN-based green laser diodes (LDs), submitted to CW stress tests at different operating conditions. Results described in the following indicate that: (i) constant current stress induces an increase in threshold current (Ith), which is well correlated to a decrease in the sub-threshold emission; (ii) the Ith increase has a power law dependence on stress time; (iii) the degradation rate is strongly dependent on the stress current level while it does not significantly depend on the optical field in the cavity; (iv) stress temperature acts as an accelerating factor for LDs degradation; the activation energy of the degradation process is equal to 258 meV; (v) pure thermal storage does not induce a significant degradation of device characteristics. Cathodoluminescence measurements were carried out to get more insight into the physical origin of the degradation process

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Section: Effects Of Temperaturesupporting

confidence: 91%

Section: Methodscontrasting

confidence: 41%

Section: Effects Of Driving Current and Opticalmentioning

confidence: 99%

See 1 more Smart Citation

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Marioli

Meneghini

Rossi

et al. 2015

Physica Status Solidi (a)

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“…We have demonstrated that the degradation kinetics are strongly determined by the stress current level. Moreover thermal Activation Energy has been extrapolated to be equal to 250 meV [8]. This value indicates that the temperature does act as an accelerating factor for device degradation: however, temperature has a limited effect on LD reliability, since the activation energy value is quite low compared to previous reports [9,10].…”

Section: Discussionmentioning

confidence: 76%

Reliability analysis of InGaN Blu-Ray laser diode

Trivellin¹,

Meneghini²,

Meneghesso³

et al. 2009

Microelectronics Reliability

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“…3,4,10 However, the properties of the deep levels involved in the degradation process have not been identified and described up to now. the properties of the deep levels (DLs) involved in the degradation process have not been identified and described up to now.…”

mentioning

confidence: 99%

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Meneghini¹,

Santi²,

Trivellin³

et al. 2011

Applied Physics Letters

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This paper reports an extensive analysis of the properties of the deep level responsible for the degradation of InGaN-based laser diodes. The analysis is based on combined optical measurements and Deep-Level Transient Spectroscopy (DLTS) investigation. Results indicate that stress induces a significant increase in threshold current of the devices, which is strongly correlated to the increase in the concentration of a deep level (DL) detected by DLTS. The DL involved in the degradation process is located 0.35–0.45 eV below the conduction band. 2D simulation indicates that degradation occurs within the quantum-well region

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Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

Cited by 38 publications

References 7 publications

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Reliability analysis of InGaN Blu-Ray laser diode

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

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