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A thin semiconducting NiO film is exposed to NO2 at room temperature. This exposure causes a work function change at the surface of the film due to adsorption of the NO2 molecules. It is found that there is a strong dependence of the adsorptivity, i.e., the amount of work function change per unit time, on the magnitude of an electrical field that is applied perpendicular to the film surface. This induced adsorptivity change is known as the electroadsorptive effect. In order to modulate the adsorptivity significantly, the electrical field strength must exceed 104 V/cm. This requirement can be achieved by using hybrid suspended gate field effect transistors with an air gap height below 1 μm.

Most accelerometers today are based on the capacitive principle. However, further miniaturization for micro integration of those sensors leads to a poorer signal-to-noise ratio due to a small total area of the capacitor plates. Thus, other transducer principles should be taken into account to develop smaller sensors. This paper presents the development and realization of a miniaturized accelerometer based on the tunneling effect, whereas its highly sensitive effect regarding the tunneling distance is used to detect small deflections in the range of sub-nm. The spring-mass-system is manufactured by a surface micro-machining foundry process. The area of the shown polysilicon (PolySi) sensor structures has a size smaller than 100 µm × 50 µm (L × W). The tunneling electrodes are placed and patterned by a focused ion beam (FIB) and gas injection system (GIS) with MeCpPtMe3 as a precursor. A dual-beam system enables maximum flexibility for post-processing of the spring-mass-system and patterning of sharp tips with radii in the range of a few nm and initial distances between the electrodes of about 30–300 nm. The use of metal–organic precursor material platinum carbon (PtC) limits the tunneling currents to about 150 pA due to the high inherent resistance. The measuring range is set to 20 g. The sensitivity of the sensor signal, which depends exponentially on the electrode distance due to the tunneling effect, ranges from 0.4 pA/g at 0 g in the sensor operational point up to 20.9 pA/g at 20 g. The acceleration-equivalent thermal noise amplitude is calculated to be 2.4–3.4 mg/. Electrostatic actuators are used to lead the electrodes in distances where direct quantum tunneling occurs.

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To realize quantum tunneling applications with movable electrodes, sharp tips with radii down to several tens of nanometers are necessary. The use of a focused ion beam (FIB) and focused electron beam (FEB) with a gas injection system (GIS) allows the integration of geometries in the nanoscale directly into micro and nano systems. However, the implementation of the tunneling effect clearly depends on the material. In this work, a metal-organic precursor is used. The investigation of the prepared tunneling electrodes enables an insight into FIB/FEB parameters for the realization of quantum tunneling applications. For this purpose, a high-resolution transmission electron microscopy (HRTEM) analysis is performed. The results show a dependence of the material nanostructure regarding platinum (Pt) grain size and distribution in an amorphous carbon matrix from the used beam and the FIB currents. The integration of the tips into a polysilicon (PolySi) beam and measuring the current signal by approaching the tips show significant differences in the results. Moreover, the approach of FEB tips shows a non-contact behavior even when the tips are squeezed together. The contact behavior depends on the grain size, proportion of platinum, and the amount of amorphous carbon in the microstructure, especially at the edge area of the tips. This study shows significant differences in the nanostructure between FIB and FEB tips, particularly for the FIB tips: The higher the ion current, the greater the platinum content, the finer the grain size, and the higher the probability of a tunneling current by approaching the tips.

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