No abstract

The growth of Al 2 O 3 onto Sn-doped In 2 O 3 (ITO) by atomic layer deposition (ALD) was studied in situ using X-ray photoelectron spectroscopy. Significant diffusion of oxygen from the substrate destroys the self-terminated monolayer adsorption of the metal precursor and results in a nominal initial growth per cycle of >1 nm. The observed mechanism precludes the preparation of monolayer thick Al 2 O 3 films on ITO substrates by ALD. The energy band alignment at the ITO/Al 2 O 3 interface is significantly different from that obtained when magnetron sputtering is used for the deposition of Al 2 O 3 onto ITO [Gassenbauer et al., Phys. Chem. Chem. Phys. 2009, 11, 3049]. The difference is attributed to a pinning of the Fermi level in the ALD-Al 2 O 3 layer close to midgap, which is attributed to the incorporation of hydrogen in the film during growth.

All-solid-state batteries with solid electrolytes having ionic conductivities in the range of those of liquid electrolytes have gained much interest as safety is still a major issue for applications. Meanwhile, lithium metal seems to be the anode material of choice to face the demand for higher capacities. Still, the main challenges that come with the use of a lithium metal anode, i.e., formation and growth of lithium dendrites, are still not understood very well. This work focuses on the reasons of the lifetime behavior of lithium symmetric cells with the solid electrolyte Li 6 PS 5 Cl and lithium electrode. In particular, the voltage increases during the application of a constant current density are investigated. The interface between the lithium metal electrode and the solid electrolyte is analyzed by X-ray photoelectron spectroscopy, and the resistance changes of each electrode during stripping and plating are investigated by impedance spectroscopy on a three-electrode cell. A main factor for the lifetime influenced by lithium dendrite formation and growth is the buildup of a lithium vacancy gradient, leading to voids which decrease the interface area and therefore increase the local current density. Additionally, those lithium vacancies in lithium metal represent a limitation for conductivity rather than migration in solid electrolyte. Further experiments indicate that the seedlike plating behavior of lithium also plays a key role in increased local current density and therefore decreased lifetime. Plating of only a small amount of lithium leads to small areas of well-connected interfaces, resulting in high local current density. A medium amount of plated lithium leads to larger areas of interface between lithium and electrolyte, balancing the current density distribution. In contrast, a high amount of repeatedly deposited lithium leads to lithium seed plating on top of already plated lithium. Those seed spots grown on top represent a better interface connection, which again leads to higher local current densities at those spots and therefore results in shorter lifetimes due to short circuits caused by lithium dendrites.

The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in‐situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo‐electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

No abstract

A series of bioassays, including in vivo induction of DNA single-strand breaks (SSB) and cytotoxicity in cytochrome P450 2E1-transfected cells, were utilized with N-nitrosodiethanolamine (NDELA), its deuterated isotopomers (alpha-D4NDELA and beta-D4NDELA), N-nitroso-2-hydroxymorpholine (NHMOR), and two of its deuterated isotopomers (2-D-NHMOR and 5,5-D2-NHMOR) to probe the mechanism of carcinogenic activation of NDELA and the role of its metabolite NHMOR. DNA samples, taken from the livers of male Wistar rats 4 h after the administration of NDELA, exhibited dose-dependent DNA SSB levels over the range of 0.08-0.75 mmol/kg (body weight), with the greatest SSB level at the highest dose. Deuterium isotope effects on DNA SSB levels were inversely dependent on dose: alpha-D4NDELA, 3. 22-1.37; and beta-D4NDELA, 1.38-0.79. At the lowest dose of 0.15 mmol/kg (body weight), 5,5-D2-NHMOR gave an isotope effect for DNA SSB of 2.8 while that for 2-D-NHMOR was 0.7. NDELA and beta-D4NDELA were equally cytotoxic to human P450 2E1-transfected V79 Chinese hamster cells, while alpha-D4NDELA was not. Significant DNA SSB levels were observed in these cells for NDELA and beta-D4NDELA but not for alpha-D4NDELA. A kinetic deuterium isotope effect of 2.6 for Vmax/Km was observed for the horse liver alcohol dehydrogenase-mediated oxidation of beta-D4NDELA to NHMOR, while kH/kD for alpha-D4NDELA was 1.05. These data provide the first definitive evidence for the activation of NDELA by a pathway involving the scission of the alpha-CH bond and are consistent with P450 2E1-mediated alpha-hydroxylation of NDELA producing the corresponding reactive alpha-hydroxynitrosamine.

The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density as well as mobility. Modulation doping, a mechanism that exploits the energy band alignment at an interface between two materials to induce free charge carriers in one of them, is shown to circumvent the mobility restriction. Due to an alignment of doping limits by intrinsic defects, however, the carrier density limit cannot be lifted using this approach. Here, a novel doping strategy using defects in a wide bandgap material to dope the surface of a second semiconductor layer of dissimilar nature is presented. It is shown that by depositing an insulator on a semiconductor material, the conductivity of the layer stack can be increased by 7 orders of magnitude, without the necessity of high-temperature processes or epitaxial growth. This approach has the potential to circumvent limits to both carrier mobility and density, opening up new possibilities in semiconductor device fabrication, particularly for the emerging field of oxide thin film electronics.

The ubiquitous use of pharmaceuticals has resulted in a continuous discharge into wastewater and pharmaceuticals and their metabolites are found in the environment. Due to their design towards specific drug targets, pharmaceuticals may be therapeutically active already at low environmental concentrations. Several human drug targets are evolutionary conserved in aquatic organisms, raising concerns about effects of these pharmaceuticals in non-target organisms. In this study, we hypothesized that the toxicity of a pharmaceutical towards a non-target invertebrate depends on the presence of the human drug target orthologs in this species. This was tested by assessing toxicity of pharmaceuticals with (miconazole and promethazine) and without (levonorgestrel) identified drug target orthologs in the cladoceran Daphnia magna. The toxicity was evaluated using general toxicity endpoints at individual (immobility, reproduction and development), biochemical (RNA and DNA content) and molecular (gene expression) levels. The results provide evidence for higher toxicity of miconazole and promethazine, i.e. the drugs with identified drug target orthologs. At the individual level, miconazole had the lowest effect concentrations for immobility and reproduction (0.3 and 0.022 mg L−1, respectively) followed by promethazine (1.6 and 0.18 mg L−1, respectively). At the biochemical level, individual RNA content was affected by miconazole and promethazine already at 0.0023 and 0.059 mg L−1, respectively. At the molecular level, gene expression for cuticle protein was significantly suppressed by exposure to both miconazole and promethazine; moreover, daphnids exposed to miconazole had significantly lower vitellogenin expression. Levonorgestrel did not have any effects on any endpoints in the concentrations tested. These results highlight the importance of considering drug target conservation in environmental risk assessments of pharmaceuticals.