1998
DOI: 10.1063/1.122503
|View full text |Cite
|
Sign up to set email alerts
|

Electrical field impact on the gas adsorptivity of thin metal oxide films

Abstract: A thin semiconducting NiO film is exposed to NO2 at room temperature. This exposure causes a work function change at the surface of the film due to adsorption of the NO2 molecules. It is found that there is a strong dependence of the adsorptivity, i.e., the amount of work function change per unit time, on the magnitude of an electrical field that is applied perpendicular to the film surface. This induced adsorptivity change is known as the electroadsorptive effect. In order to modulate the adsorptivity signifi… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
10
1

Year Published

2000
2000
2011
2011

Publication Types

Select...
6
2
1

Relationship

1
8

Authors

Journals

citations
Cited by 29 publications
(11 citation statements)
references
References 5 publications
0
10
1
Order By: Relevance
“…Presently, it is not known how the hydrogen adsorption at the metal-insulator interface of MIS field-effect sensors is influenced by the electric field, but reports on suspended gate field-effect devices show a large dependence on absorptivity from the applied electric field. 23 In our case, however, no obvious trend can be observed supporting such a model.…”
Section: Discussioncontrasting
confidence: 66%
“…Presently, it is not known how the hydrogen adsorption at the metal-insulator interface of MIS field-effect sensors is influenced by the electric field, but reports on suspended gate field-effect devices show a large dependence on absorptivity from the applied electric field. 23 In our case, however, no obvious trend can be observed supporting such a model.…”
Section: Discussioncontrasting
confidence: 66%
“…15,16 According to the electron theory of chemisorption, the chemical potential controls the catalytic activity on the surface, determining the occupation probability of the chemisorbed states. In addition, it has been observed that a large gate voltage induced field is capable of affecting gas adsorptivity on the ZnO NW significantly.…”
mentioning
confidence: 99%
“…21,23,27,29 High electric field may also shift the adsorbent energy with respect to the solid substrate. 22,30 However, in order to generate a shift of a few mV at least, over a distance of ∼ 0.3 nm, the field strength has to exceed 3 × 10 4 V/cm. These and even higher fields persist at the electrode/SE interface.…”
Section: The Cathode/se Sidementioning
confidence: 99%