Enhanced room temperature gas sensing with metal oxides by means of the electroadsorptive effect in hybrid suspended gate FET

Scharnagl, K.; Bogner, Martin; Fuchs, Anne; Winter, R.; Doll, Theodor; Eisele, I.

doi:10.1016/s0925-4005(99)00059-3

Cited by 14 publications

(6 citation statements)

References 6 publications

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“…Reciprocally, oxygen adsorptivity can be completely shut down, and as a result, the subsequent catalytic conversion of CO to CO 2 at the SnO 2 surface can be dramatically altered upon modulating the electronic state of the material by applying an appropriate gate potential. By close analogy to processes taking place in macroscopic metal oxide semiconductor field effect transistor (MOSFET) gas sensors, 19,20 this observation immediately brings to mind gate-tunable nanowire-based FET gas sensors wherein the gate potential metaphorically plays a role not unlike changing the surface functionality of the sensor. Likewise, the observation implies the possibility of gate-tunable catalysts whose species-selective reactivity, sensitivity, and response time can be electronically controlled.…”

Section: Introductionmentioning

confidence: 99%

Electronic Control of Chemistry and Catalysis at the Surface of an Individual Tin Oxide Nanowire

et al. 2005

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Tin oxide single nanowires configured as field effect transistors were shown to be operable and tunable alternately as gas sensors or as catalysts under a gaseous atmosphere that simulated realistic ambient conditions. The unusually large surface-to-volume ratio available with nanowires causes adsorption or desorption of donor or acceptor molecules on the nanowire's surface to greatly alter its bulk electron density at relatively small values of the gate voltage. This process can be sensitively monitored as changes in the nanowire's conductivity. The potentially radical change in carrier density can lead to significant changes in the nanowire's sensitivity as a sensor or reciprocally as a catalyst in reactions that involve charge exchange across the nanowire's surface. This leads to the prospect of tuning catalysis or other surface reactions entirely through electronic means.

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Section: Introductionmentioning

confidence: 99%

Electronic Control of Chemistry and Catalysis at the Surface of an Individual Tin Oxide Nanowire

et al. 2005

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“…The state-of-the art technologies for low-frequency vibration sensing applications have been mostly used for capacitive or piezoresistive sensing scheme [14–16] while the research of VMGFET has been more focused on pressure/strain sensors or gas sensors [2, 10]. In order to enhance the sensitivity to vertical motion using VMGFET, Aoyagi proposed nickel proof mass on flexible beam, which required alignment and electroplating to form proof mass [17].…”

Section: Introductionmentioning

confidence: 99%

Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor

Kang

Lee

Yang³

et al. 2015

Nano-Micro Lett.

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A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. The VMGFET using air gap as an insulator layer allows the gate to move on the substrate vertically by external forces. Finite element analysis is used to simulate mechanical behaviors of the designed structure. For the simulation, the ground acceleration spectrum of the 1952 Kern County Earthquake is employed to investigate the structural integrity of the sensor in vibration. Based on the simulation, a prototype VMGFET accelerometer is fabricated from silicon on insulator wafer. According to current–voltage characteristics of the prototype VMGFET, the threshold voltage is measured to be 2.32 V, which determines the effective charge density and the mutual transconductance of 1.545×10−8 C cm−2 and 6.59 mA V−1, respectively. The device sensitivity is 9.36–9.42 mV g−1 in the low frequency, and the first natural frequency is found to be 1230 Hz. The profile smoothness of the sensed signal is in 3 dB range up to 1 kHz.

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“…For a fixed gap FET, the gap distance between gate and substrate is filled with air and keeps constant. The fixed gap FET is sensitive to change in dielectric material, hence, the device is used for gas sensing or chemical sensing by detecting the change in dielectric constant [11][12][13][14][15][16]. In contrast, the gate position of the movable gate FET can be changed by the external force which is applicable for physical sensors such as accelerometers or pressure sensors [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

Song¹,

Forfang²,

Cole³

et al. 2014

J. Micromech. Microeng.

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The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

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Enhanced room temperature gas sensing with metal oxides by means of the electroadsorptive effect in hybrid suspended gate FET

Cited by 14 publications

References 6 publications

Electronic Control of Chemistry and Catalysis at the Surface of an Individual Tin Oxide Nanowire

Electronic Control of Chemistry and Catalysis at the Surface of an Individual Tin Oxide Nanowire

Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

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