All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.

Laser-enhanced, room-temperature wet etching of GaN using either dilute HCl:H 2 O ͑1:10͒ or 45% KOH:H 2 O͑1:3͒ is reported. Etch rates of a few hundred Å/min ͑HCl͒ and up to a few thousand Å/min ͑KOH͒ have been measured for unintentionally doped n-type films of thickness ͑1-2 m͒ grown by MOCVD on a sapphire substrate. The etching is thought to take place photoelectrochemically with holes and electrons generated by incident illumination from 4.5 mW of HeCd laser power enhancing the oxidation and reduction reactions in an electrochemical cell.

The 2016 presidential election was characterized by the remarkable expression of prejudice toward a range of groups. In two closely related studies ( N = 388; 196 supporting Trump, 192 Clinton), we measured (1) perceptions of social norms toward prejudice or (2) people’s own levels of prejudice toward 19 social groups, shortly before and after the election. Some groups were targeted by the Trump campaign (e.g., Muslims, immigrants) and some were not (e.g., atheists, alcoholics). Participants saw an increase in the acceptability of prejudice toward groups Trump targeted but little shift in untargeted groups. By contrast, participants reported a personal drop in Trump-targeted prejudice, probably due changing comparison standards, with no change in prejudice toward untargeted groups. The 2016 election seems to have ushered in a normative climate that favored expression of several prejudices; this shift may have played a role in the substantial increase in bias-related incidents that follow closely upon the election.

Do claims of "free speech" provide cover for prejudice? We investigate whether this defense of racist or hate speech serves as a justification for prejudice. In a series of 8 studies (N = 1,624), we found that explicit racial prejudice is a reliable predictor of the "free speech defense" of racist expression. Participants endorsed free speech values for singing racists songs or posting racist comments on social media; people high in prejudice endorsed free speech more than people low in prejudice (meta-analytic r = .43). This endorsement was not principled-high levels of prejudice did not predict endorsement of free speech values when identical speech was directed at coworkers or the police. Participants low in explicit racial prejudice actively avoided endorsing free speech values in racialized conditions compared to nonracial conditions, but participants high in racial prejudice increased their endorsement of free speech values in racialized conditions. Three experiments failed to find evidence that defense of racist speech by the highly prejudiced was based in self-relevant or self-protective motives. Two experiments found evidence that the free speech argument protected participants' own freedom to express their attitudes; the defense of other's racist speech seems motivated more by threats to autonomy than threats to self-regard. These studies serve as an elaboration of the Justification-Suppression Model (Crandall & Eshleman, 2003) of prejudice expression. The justification of racist speech by endorsing fundamental political values can serve to buffer racial and hate speech from normative disapproval. (PsycINFO Database Record

We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.