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Photonic systems based on complementary metal oxide semiconductor (CMOS) technology require the integration of passive and active photonic devices. The integration of waveguides and photodetector is one of the most important technologies. We report a Ge p-i-n photodetector that is monolithically integrated with silicon oxynitride and silicon nitride waveguides. All processes and materials are CMOS compatible and can be implemented in the current integrated circuit process technology. The small size of the devices results in low absolute dark current. The waveguidecoupled Ge devices show high efficiency (~90%) over a wide range of wavelengths well beyond the direct band gap of Ge, resulting in a responsivity of 1.08 A/W for 1550 nm light. The device speed of 7.2 GHz at 1V reverse bias is strongly affected by the capacitance of the probe pads. The high-performance of the devices at low voltage (

We present a fully tunable multistage narrowband optical pole-zero notch filter that is fabricated in a silicon complementary metal oxide semiconductor (CMOS) foundry. The filter allows for the reconfigurable and independent tuning of the center frequency, null depth, and bandwidth for one or more notches simultaneously. It is constructed using a Mach-Zehnder interferometer (MZI) with cascaded tunable all-pass filter (APF) ring resonators in its arms. Measured filter nulling response exhibits ultranarrow notch 3 dB BW of 0.6350 GHz, and nulling depth of 33 dB. This filter is compact and integrated in an area of 1.75 mm 2. Using this device, a novel method to cancel undesired bands of 3 dB bandwidth of 910 MHz in microwave-photonic systems is demonstrated. The ultranarrow filter response properties have been realized based on our developed low-propagation loss silicon channel waveguide and tunable ring-resonator designs. Experimentally, they yielded a loss of 0.25 dB/cm and 0.18 dB/round trip, respectively.

We designed and demonstrated a compact, high-index contrast (HIC) vertical waveguide coupler for TE single mode operation with the lowest coupling loss of 0.20 dB +/- 0.05 dB at 1550 nm. Our vertical coupler consists of a pair of vertically overlapping inverse taper structures made of SOI and amorphous silicon. The vertical coupler can suppress power oscillation observed in regular directional couplers and guarantees vertical optical impedance matching with great tolerance for fabrication and refractive index variations of the waveguide materials. The coupler furthermore shows excellent broadband coupling efficiencies between 1460 nm and 1570 nm.

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