2007
DOI: 10.1109/jlt.2006.888932
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Demonstration of a Fourth-Order Pole-Zero Optical Filter Integrated Using CMOS Processes

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Cited by 89 publications
(41 citation statements)
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“…The circuits are typically fabricated on silicon-on-insulator (SOI) substrates with a 200-400 nm thick top silicon layer and a 1-2 µm thick SiO 2 buried oxide layer. In most cases e-beam lithography is used for the definition of the structures, but the use of DUV-lithography has also been demonstrated [1,[5][6][7]. The latter is compatible with standard processes used for the fabrication of the most advanced electronic circuits and allows for mass-manufacturing.…”
Section: Introductionmentioning
confidence: 99%
“…The circuits are typically fabricated on silicon-on-insulator (SOI) substrates with a 200-400 nm thick top silicon layer and a 1-2 µm thick SiO 2 buried oxide layer. In most cases e-beam lithography is used for the definition of the structures, but the use of DUV-lithography has also been demonstrated [1,[5][6][7]. The latter is compatible with standard processes used for the fabrication of the most advanced electronic circuits and allows for mass-manufacturing.…”
Section: Introductionmentioning
confidence: 99%
“…In the past decade, a number of groups have made significant contributions to the study of integrated optical Using silicon waveguides, Rasras et al [98] demonstrated processor chips comprising a particular RAMZI circuit as shown in Figure 21 and their use for implementing bandpass and notch types of RF filters. The processor chips feature a waveguide propagation loss of 0.25 dB/cm and a filter bandwidth smaller than 1 GHz for an FSR of 13.5 GHz.…”
Section: Various Filter Implementationsmentioning
confidence: 99%
“…[17][18][19][20][21][22][23] What potential showstoppers exist? Six issues have been identified as necessary for a complete ULSI silicon microphotonic CMOS technology: i) neutralization of refractive index sensitivity to temperature fluctuations though the thermo-optic effect [24,25]; ii) achieving dimensional precision required for optical components [26]; iii) active Ge devices within the interconnect stack without an epitaxial growth template [27]; iv) computer aided design and simulation of electronic-photonic circuits [28,29,30]; iv) chiplevel photonic test; and v) scalable electronic-photonic packaging. Research solutions have been achieved for each issue, and proof of implementation at the required cost and performance points are the roadmap.…”
Section: The Roadmap For Monolithic Silicon Microphotonicsmentioning
confidence: 99%