Coupling mechanisms for a heterogeneous silicon nanowire platform

Thourhout, Dries Van; Roelkens, Günther; Baets, Roel; Bogaerts, Wim; Brouckaert, Joost; Debackere, Peter; Dumon, Pieter; Scheerlinck, Stijn; Schrauwen, Jonathan; Taillaert, Dirk; Laere, Frederik Van; Campenhout, Joris Van

doi:10.1088/0268-1242/23/6/064004

Cited by 21 publications

(11 citation statements)

References 35 publications

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“…For the integration of surface illuminated III-V photodetectors on silicon PICs, a vertical grating coupler interface can be used [11][12][13][14][15]. Figure 4a schematically shows this coupling scheme where the light confined in a silicon waveguide is diffracted vertically to the III-V photodetector bonded on the grating coupler.…”

Section: Grating Coupler Interfacesmentioning

confidence: 99%

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

et al. 2015

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Section: Grating Coupler Interfacesmentioning

confidence: 99%

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

et al. 2015

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“…Heterogeneous integration, achieved through the bonding of III-V semiconductor materials on a SOI platform, is the most promising approach to address this problem. Among several schemes to couple the light from the III-V active medium into the SOI waveguide, 1 evanescent optical coupling is the most promising one and requires no additional coupling structures, 2 although the active material and the silicon waveguide need to be within several hundred nanometers. Several evanescent hybrid III-V/ Si lasers based on direct bonding were reported, [2][3][4][5] but this technique is very sensitive to surface topography, contamination or presence of particles and may not be sufficiently robust for industrial-scale fabrication where such strict requirements are difficult to meet.…”

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confidence: 99%

Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices

Stanković

Jones

Heck

et al. 2011

Electrochem. Solid-State Lett.

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Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100 nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process shows good robustness and bonding strength, with a break-down shear stress of 2 MPa. The process can be scaled-up to a multiple die-towafer bonding procedure. Silicon photonics, based on the silicon-on-insulator (SOI) material platform, is considered as the technology of choice for the integration of photonic devices with microelectronic circuits. However, the fabrication of efficient light sources in silicon photonics is challenging due to silicon's indirect bandgap. Heterogeneous integration, achieved through the bonding of III-V semiconductor materials on a SOI platform, is the most promising approach to address this problem. Among several schemes to couple the light from the III-V active medium into the SOI waveguide, 1 evanescent optical coupling is the most promising one and requires no additional coupling structures, 2 although the active material and the silicon waveguide need to be within several hundred nanometers. Several evanescent hybrid III-V/ Si lasers based on direct bonding were reported, 2-5 but this technique is very sensitive to surface topography, contamination or presence of particles and may not be sufficiently robust for industrial-scale fabrication where such strict requirements are difficult to meet.Compared to direct bonding, adhesive bonding is more tolerant to surface topography and particle contamination. It has been used for hybrid integration of photonic and electronic circuits.6 Both thermoplastic polymers, like SU-8 7 and thermosetting polymers, such as polyimide and BCB, 8 are used as adhesives. Our heterogeneous integration scheme assumes bonding unprocessed III-V dies on top of pre-patterned SOI waveguide circuits (see Fig. 1a). Precise bonding alignment is not required since the III-V dies are processed after the bonding. Post-bonding thermal budget should allow 350 C processing of the III-V components. Therefore, a thermosetting polymer, divinylsiloxane-bis-benzocyclobutene (DVS-BCB), also referred to as BCB, was chosen. It is a well-known material that is used both for wafer-to-wafer 8 and die-to-wafer bonding processes. 9 Recently, the fabrication of evanescently-coupled photodetectors, 10 hybrid III-V/Si lasers 11 and several other photonics devices 12 using BCB bonding has been demonstrated, but in these cases, a manual bonding procedure was used. This resulted in a difficult-to-control bonding procedure, which prevents scaling-up to an industrial-level fabrication. In this paper, we report a machine-based BCB bonding process providing thin bonding layers (<100 nm), suitable for the fa...

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“…Due to silicon's lack of a direct band gap, generation or detection of light requires additional material. A near-future candidate as light source for mass-produced silicon PICs is a VCSEL mounted above an out-of-plane coupler with automated pick-and-place equipment [9], [10]. Furthermore, these couplers are very suitable for functional wafer-scale testing of PICs during the fabrication process.…”

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Optimized 3-D Simulation Method for Modeling Out-of-Plane Radiation in Silicon Photonic Integrated Circuits

Westerveld

Urbach

Yousefi

2011

IEEE J. Quantum Electron.

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Abstract-We present an accurate and fast 3D simulation scheme for out-of-plane grating couplers, based on two dimensional rigorous (finite difference time domain) grating simulations, the effective index method (EIM), and the RayleighSommerfeld diffraction formula. In comparison with full 3D FDTD simulations, the rms difference in electric field is below 5% and the difference in power flux is below 3%. A grating coupler for coupling from a silicon-on-insulator photonic integrated circuit to an optical fiber positioned 0.1 mm above the circuit is designed as example.

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Coupling mechanisms for a heterogeneous silicon nanowire platform

Cited by 21 publications

References 35 publications

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices

Optimized 3-D Simulation Method for Modeling Out-of-Plane Radiation in Silicon Photonic Integrated Circuits

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