III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

Roelkens, Günther; Abassi, Amin; Cardile, Paolo; Dave, Utsav D.; Groote, Andreas De; Koninck, Yannick De; Dhoore, Sören; Fu, Xin; Gassenq, A.; Hattasan, Nannicha; Huang, Qiangsheng; Kumari, Sulakshna; Keyvaninia, Shahram; Kuyken, Bart; Li, Lianyan; Mechet, Pauline; Muneeb, Muhammad; Sanchez, Dorian; Shao, Haifeng; Spuesens, Thijs; Subramanian, Ananth; Uvin, Sarah; Tassaert, M.; Gasse, Kasper Van; Verbist, Jochem; Wang, Ruijun; Wang, Zhechao; Zhang, Jing; Campenhout, Joris Van; Yin, Xin; Bauwelinck, Johan; Morthier, Geert; Baets, Roel; Thourhout, Dries Van

doi:10.3390/photonics2030969

Cited by 116 publications

(80 citation statements)

References 84 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In this work we use a III-V-on-silicon integration platform, in which the passive waveguide circuits are implemented in a siliconon-insulator waveguide layer and the active opto-electronic components are realized in a III-V waveguide layer, adhesively bonded on top. A more detailed description of the III-V integration process and post-processing of the 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64III-V opto-electronic components can be found in [7]. Here we describe the key components to be implemented on this integration platform for the EPFC: the III-V-on-silicon mode-locked laser and the Mach-Zehnder modulator.…”

Section: Iii-v-on-silicon Integrated Opto-electronic Components For Tmentioning

confidence: 99%

“…The parameters for the MLL and MZM are based on the model used for the PIC system. The on-chip SOA is modeled based on measurement results of already fabricated and tested III -1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 V-on-Si SOAs [7]. The LNA (type CGY2128UH/C1) was modeled using the standard VPI model and the specs of the data sheet.…”

Section: Towards a Fully Integrated Epfcmentioning

confidence: 99%

See 1 more Smart Citation

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

et al. 2017

View full text Add to dashboard Cite

Abstract:In this work we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we turn to the use of photonic integrated devices. In the demonstrations five channels in the Ka-band (27.5 GHz to 30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of -20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a conversion gain can be obtained on a millimeter-sized photonic integrated circuit. AbstractIn this work we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we turn to the use of photonic integrated devices. In the demonstrations five channels in the Ka-band (27.5 GHz to 30 GHz) with 500 MHz bandwidth are downconverted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of -20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

show abstract

Section: Iii-v-on-silicon Integrated Opto-electronic Components For Tmentioning

confidence: 99%

Section: Towards a Fully Integrated Epfcmentioning

confidence: 99%

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Recently, significant research has been done in the area of III-V/SOI laser diodes, in which laser structures are realised through integration of III-V epitaxy on the SOI platform through direct or adhesive wafer bonding techniques [3]. In this way the laser devices can be co-integrated with silicon passive waveguide circuits, high-speed silicon modulators and germanium photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a discretely tunable III-V/SOI sampled grating distributed feedback laser

Dhoore

Abbasi

et al. 2016

2016 IEEE Photonics Conference (IPC)

Self Cite

View full text Add to dashboard Cite

show abstract

“…1,4,8,9 However, for silicon photonics, it is important to reduce the power consumption. Because the transition energy consumed by an EAM is proportional to the driving voltage squared, 1 a low driving voltage EAM is required in silicon photonics.…”

mentioning

confidence: 99%

“…4,8,9 Thanks to the highly selective wet etching process used, a photoresist mask instead of a SiN hard mask can be used to define the III-V waveguide. In this way, the deposition and etching of SiN hardmask layers by PECVD and ICP-RIE respectively is avoided.…”

mentioning

confidence: 99%

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

Huang

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

In this paper, a new method for realizing a low driving voltage electroabsorption modulator based on the band-filling effect is demonstrated. The InP-based electroabsorption modulator is integrated using DVS-BCB adhesive bonding on a silicon-oninsulator waveguide platform. When the electroabsorption modulator is forward biased, the band-filling effect occurs, which leads to a blue shift of the exciton absorption spectrum while the absorption strength stays almost constant. In static operation, an extinction ratio of more than 20 dB with 100 mV bias variation is obtained in an 80 µm long device. In dynamic operation, 1.25 Gbps modulation with a 6.3 dB extinction ratio is obtained using only a 50 mV peak-to-peak driving voltage. The band-filling effect provides a novel method for realizing ultra-low-driving-voltage electroabsorption modulators.Quantum-confined Stark effect (QCSE) based electroabsorption modulators (EAM) exhibit high speed, low energy consumption, relatively high extinction ratio and small footprint.1,2 These features make EAMs widely used in optical communications. In addition, the electroabsorption effect can also be used to build a high speed photodetector, which possesses a similar structure as that of an EAM.3 This dual function property enables, e.g., on-chip optical transceivers 4 and compact optoelectronic oscillators (OEO).5 Recently, silicon photonics integrated with electronic devices fabricated in complementary (CMOS) production lines has become an enabling technology for the realization of integrated optical systems.6,7 High speed InP-based EAMs have also been successfully implemented in silicon photonic circuits though hybrid integration technology. 1,4,8,9 However, for silicon photonics, it is important to reduce the power consumption. Because the transition energy consumed by an EAM is proportional to the driving voltage squared, 1 a low driving voltage EAM is required in silicon photonics. On the other hand, an EAM directly driven by the low voltage swing signal from an advanced digital logical CMOS driver can also save the energy consumption from the electrical signal amplifier. Recently, sub-100 mV driving voltage silicon modulators based on a high Q microring resonator or a photonic crystal cavity have been demonstrated.10,11 However, those devices are very sensitive to fabrication imperfections and cannot be used as photodetectors. For QCSE based EAMs, it is challenga) Electronic mail: liu.liu@coer-scnu.org b) Electronic mail: sailing@kth.se ing to reduce the driving voltage without an increase in the modulator size and insertion loss. Even when using a complex slow-light Bragg waveguide to enhance lightmatter interaction, 12 it is still hard to integrate with silicon photonics and reduce the driving voltage to the level of silicon modulators. Therefore, it is desirable to find a new, simple way to reduce the driving voltage without requiring complex fabrication procedures.The band-filling effect in modulation-doped multiple quantum-wells (MQWs) has been studied since 1980s. 13...

show abstract

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

Cited by 116 publications

References 84 publications

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

Demonstration of a discretely tunable III-V/SOI sampled grating distributed feedback laser

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

Contact Info

Product

Resources

About