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We experimentally demonstrate the optical transmission at 1550 nm of the fundamental slot modes (quasi-TM modes) in horizontal single and multiple slot waveguides and ring resonators consisting of deposited amorphous silicon and silicon dioxide. We demonstrate that the horizontal multiple slot configuration provides enhanced optical confinement in low index slot regions compared to a horizontal single slot structure with the same total SiO2 layer thickness by comparing their thermo-optic coefficients for the horizontal slot ring resonators. We show in these early structures that horizontal slot waveguides have low propagation loss of 6 approximately 7 dB/cm. The waveguide loss is mainly due to a-Si material absorption. The addition of a-Si/SiO(2) interfaces does not introduce significant scattering loss in a horizontal multiple slot waveguide compared to a horizontal single slot waveguide.

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The optical performance of one monofocal and five multifocal lenses was evaluated in the laboratory and photographically. The laboratory testing included determination of the modulation transfer function (MTF), through focus response (TFR), resolution efficiency, and Strehl ratio of each lens. The photographic testing included photographs of the Regan high contrast acuity chart at ten feet with clearest focus and 18 additional photographs in which the image was defocused using minus trial lenses in 0.25 diopter increments. A color photograph of the Kodak color chart was also taken using each lens. All testing was conducted using a 3 mm artificial pupil under ideal implant conditions with no decentration or tilt. The laboratory and photographic results demonstrate that all the multifocal lenses had a two- to three-fold increase in the depth of field with at least a 50% lower contrast in the retinal image. The photographic testing revealed a one to two line better resolution limit with the monofocal lens, which corresponded to the 12% to 41% better MTF cut-off value with the monofocal lens by laboratory testing. The measured resolution efficiencies of all six lenses were comparable. The color photographs revealed color mixing of adjacent colors with the multifocal lenses, whereas the colors appeared unchanged from the original with the monofocal lens.

We designed and demonstrated a compact, high-index contrast (HIC) vertical waveguide coupler for TE single mode operation with the lowest coupling loss of 0.20 dB +/- 0.05 dB at 1550 nm. Our vertical coupler consists of a pair of vertically overlapping inverse taper structures made of SOI and amorphous silicon. The vertical coupler can suppress power oscillation observed in regular directional couplers and guarantees vertical optical impedance matching with great tolerance for fabrication and refractive index variations of the waveguide materials. The coupler furthermore shows excellent broadband coupling efficiencies between 1460 nm and 1570 nm.

Multilevel thin film processing, global planarization and advanced photolithography enables the ability to integrate complimentary materials and process sequences required for high index contrast photonic components all within a single CMOS process flow. Developing high performance photonic components that can be integrated with electronic circuits at a high level of functionality in silicon CMOS is one of the basic objectives of the EPIC program sponsored by the Microsystems Technology Office (MTO) of DARPA. Our research team consisting of members from: BAE Systems, Alcatel-Lucent, Massachusetts Institute of Technology, Cornell University and Applied Wave Research reports on the latest developments of the technology to fabricate an application specific, electronic-photonic integrated circuit (AS_EPIC). Now in its second phase of the EPIC program, the team has designed, developed and integrated fourth order optical tunable filters, both silicon ring resonator and germanium electro-absorption modulators and germanium pin diode photodetectors using silicon waveguides within a full 150nm CMOS process flow for a broadband RF channelizer application. This presentation will review the latest advances of the passive and active photonic devices developed and the processes used for monolithic integration with CMOS processing. Examples include multilevel waveguides for optical interconnect and germanium epitaxy for active photonic devices such as p-i-n photodiodes and modulators.

We present a highly efficient integratable waveguide transformer that is capable of converting Gaussian-like waveguide modes to much more complicated non-Gaussian-like slot-waveguide modes, and vice versa. The structure consists of several pairs of complementary tapers capable of making this mode conversion virtually lossless. The capability of extremely low-loss mode transformation between these two classes of waveguides has been demonstrated by means of single- and double-slot transformers. Our simulation has shown that the total transformation losses are less than 0.01 and 0.02 dB per transformer, respectively, and can be easily achieved, with a total device length of less than 100 microm.

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