The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied at room temperature by scanning tunneling microscopy. The surface was exposed to oxygen under a partial pressure of 1×10-9 Torr. Initial exposure led to bright and dark features at adatom sites. This dark feature, which was previously reported as a main channel for oxidation, only appeared in the faulted half of the dimer adatom stacking-fault (DAS) structure. The images suggest that the adsorption onto the un-faulted half starts after the faulted half are occupied with oxygen atoms. This clearly indicates that oxygen adsorption occurs at adatom sites with higher energy states.
The Perelomov coherent states of SU(1, 1) are labelled by elements of the quotient of SU(1, 1) by the compact subgroup. Taking advantage of the fact that this quotient is isomorphic to the affine group of the real line, we are able to parametrize the coherent states by elements of that group or equivalently by points in the half-plane. Such a formulation permits to find new properties of the SU(1, 1) coherent states and to relate them to affine wavelets.
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