STM modification of MoS2 in the nanometer-scale using a gas—solid reaction

Kohno, Makiko; Doi, Takahisa; Hasegawa, Tsuyoshi; Tomimatsu, Satoshi; Hosoki, Shigeyuki

doi:10.1016/0040-6090(96)08712-3

Cited by 3 publications

(3 citation statements)

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“…It is possible that etching was initiated from the pre-existing defects [42], should be a stable hole structure. A similar phenomenon has been reported due to hydrogen etching of other 2D materials [41,45].…”

Section: Resultssupporting

confidence: 83%

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Revealing the microscopic CVD growth mechanism of MoSe₂ and the role of hydrogen gas during the growth procedure

et al. 2018

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Understanding the microscopic mechanisms for the nucleation and growth of two-dimensional molybdenum diselenide (2D MoSe) via chemical vapor deposition (CVD) is crucial towards the precisely controlled growth of the 2D material. In this work, we employed a joint use of transmission electron microscopy and CVD, in which the 2D MoSe were directly grown on a graphene membrane based on grids, that enables the microstructural characterization of as-grown MoSe flakes. We further explore the role of hydrogen gas and find: in an argon ambient, the primary products are few-layer MoSe flakes, along with MoO nanoparticles; while with the introduction of H, single-layer MoSe became the dominant product during the CVD growth. Quantitative analysis of the effects of H flow rate on the flake sizes, and areal coverage was also given. Nevertheless, we further illuminated the evolution of shape morphology and edge structures of single-layer MoSe, and proposed the associated growth routes during a typical CVD process.

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Section: Resultssupporting

confidence: 83%

“…The introduction of H 2 during growth etches multilayers core appeared on the monolayer MoSe 2 [40]. This is due to the fact that Se atoms in the multilayers core could be removed by atomic hydrogen [41]. With the H 2 addition, the MoSe 2 flakes now have almost no multilayer area (figures 2 and 3).…”

Section: Resultsmentioning

confidence: 99%

Revealing the microscopic CVD growth mechanism of MoSe₂ and the role of hydrogen gas during the growth procedure

et al. 2018

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“…5 Applying a voltage pulse to MoS 2 surface in a H 2 atmosphere caused surface marks to be produced by a gas-solid reaction that enhanced the evaporation of toplayer sulfur atoms. 6 The STM has also been utilized to produce nanometer scale oxide patterns on titanium by tip induced anodization. 7 In this letter, we present a technique for the production of pits in a sputtered amorphous carbon film.…”

Section: ͓S0003-6951͑99͒00923-7͔mentioning

confidence: 99%

Writing nanometer-scale pits in sputtered carbon films using the scanning tunneling microscope

Eagle

Fedder

1999

Applied Physics Letters

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Review of laser nanomachining

Ali¹,

Wagner²,

Shakoor³

et al. 2008

Journal of Laser Applications

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Lasers are widely used for macro- and micromachining applications in numerous industries such as automotive, electronics, and medical manufacturing. However, there are many challenges encountered in the utilization of lasers for nanomachining. The most critical requirement is that the diffraction limit of laser light must be overcome. With recent developments in laser technology in terms of short-wavelength and ultrashort pulse width, there is a wealth of opportunities to beat the diffraction limit for nanomachining of structures, devices, and materials. In this review paper, first the state-of-the-art lasers are examined from the perspective of the requirements of nanomachining. Second, a set of both serial and parallel types of laser-based, “top-down” nanomachining methods is described. Third, preliminary results obtained in our laboratory of the most recent, novel approach involving surface plasmon polaritons for the potential of massively parallel nanomachining are presented. Finally, the potential of lasers for cost-effective nanomanufacturing is assessed.

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STM modification of MoS2 in the nanometer-scale using a gas—solid reaction

Cited by 3 publications

References 9 publications

Revealing the microscopic CVD growth mechanism of MoSe₂ and the role of hydrogen gas during the growth procedure

Revealing the microscopic CVD growth mechanism of MoSe₂ and the role of hydrogen gas during the growth procedure

Writing nanometer-scale pits in sputtered carbon films using the scanning tunneling microscope

Review of laser nanomachining

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STM modification of MoS2 in the nanometer-scale using a gas—solid reaction

Cited by 3 publications

References 9 publications

Revealing the microscopic CVD growth mechanism of MoSe2 and the role of hydrogen gas during the growth procedure

Revealing the microscopic CVD growth mechanism of MoSe2 and the role of hydrogen gas during the growth procedure

Writing nanometer-scale pits in sputtered carbon films using the scanning tunneling microscope

Review of laser nanomachining

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Revealing the microscopic CVD growth mechanism of MoSe₂ and the role of hydrogen gas during the growth procedure

Revealing the microscopic CVD growth mechanism of MoSe₂ and the role of hydrogen gas during the growth procedure