1999
DOI: 10.1063/1.124218
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Writing nanometer-scale pits in sputtered carbon films using the scanning tunneling microscope

Abstract: Nanolithography of metal films using scanning force microscope patterned carbon masks

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Cited by 12 publications
(6 citation statements)
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References 8 publications
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“…The examples discussed in this work demonstrate the transfer of complex 3D-shaped patterns with lateral line and dot widths well below 100 nm. According to previous publications, [3][4][5] this is probably not the lower limit for the structure size achievable. Future experiments will explore the potential of this lithographic method for wide-area patterning for technological purposes.…”
Section: Institute Of Solid State and Materials Research Dresden D-0mentioning
confidence: 90%
See 2 more Smart Citations
“…The examples discussed in this work demonstrate the transfer of complex 3D-shaped patterns with lateral line and dot widths well below 100 nm. According to previous publications, [3][4][5] this is probably not the lower limit for the structure size achievable. Future experiments will explore the potential of this lithographic method for wide-area patterning for technological purposes.…”
Section: Institute Of Solid State and Materials Research Dresden D-0mentioning
confidence: 90%
“…4 Recently, Eagle and Fedder reported writing nanoscale pits in a-C layers using the scanning tunneling microscope ͑STM͒. 5 For a technological applicability of this technique, however, the slow writing speed is a serious obstacle.…”
Section: Institute Of Solid State and Materials Research Dresden D-0mentioning
confidence: 99%
See 1 more Smart Citation
“…So it remains to check that in the limit N → ∞, P(p | r) becomes a delta function supported at (3.16). The calculation is based on the application of Central Limit Theorem [41,Chapter 2] and is fairly long. Here we only present the final answer:…”
Section: Asymptotically Optimal Channel Detector In the Presence Of G...mentioning
confidence: 99%
“…Most of the patterning strategies employed, such as electro plasma etching, post-activation processes and lithography, oen involve high temperature processing and dangerous gases, which are not cost efficient or suitable for large scale preparation. [44][45][46][47] Carbon gasication, catalyzed by metallic and oxide particles in a controlled atmosphere, has been demonstrated to be a facile and efficient method. 48 Based on their highly uniform porosity compared to many other porous carbon materials, DGNs exhibit enhanced electrochemical performance and high-rate capability in asymmetric supercapacitor applications.…”
Section: Introductionmentioning
confidence: 99%