Low-temperature hydrophobic silicon wafer bonding Appl. Phys. Lett. 83, 4767 (2003); 10.1063/1.1632032Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics Low-temperature anodic oxidation of silicon using a wave resonance plasma sourceWe present the results of an infrared ͑IR͒ spectroscopic investigation of interfaces between two hydrophilic Si wafers bonded at low temperature. Multiple internal transmission IR spectra were recorded of the bonds, with different chemical pretreatments of Si surfaces employed before bonding. The analysis of IR spectra shows that the number of O-H and H-Si-O x species at the interface depends strongly on the chemical pretreatment type, which determines the bonding energy. The annealing procedure used in the bonding process leads to dissociation of water molecules, oxidation of silicon at the interfaces, and diffusion of hydrogen into silicon oxide layer formed at the interface. The difference in bonding processes is discussed.
High quality dilute nitride subcells for multijunction solar cells are achieved using GaInNAsSb. The effects on device performance of Sb composition, strain and purity of the GaInNAsSb material are discussed. New world records in efficiency have been set with lattice-matched InGaP/GaAs/GaInNAsSb triple junction solar cells and a roadmap to 50% efficiency with lattice-matched multijunction solar cells using GaInNAsSb is shown.
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