Infrared spectroscopy of bonded silicon wafers

Milekhin, A. G.; Himcinschi, Cameliu; Friedrich, M.; Hiller, Karla; Wiemer, M.; Geßner, Thomas; Schulze, Steffen; Zahn, Dietrich R. T.

doi:10.1134/s1063782606110108

Cited by 19 publications

(12 citation statements)

References 28 publications

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“…4, curve 3). Reduction of the TO−LO phonon energy splitting corresponds to the stress relaxation in a silicon oxide layer [11]. The increase in the splitting of TO−LO phonons is associated with stoichiometry growth at the silicon−silicon oxide interface as the SiO 2 content in the SiO/SiO 2 mixture increases [12].…”

Section: Macroporous Silicon Structures With Sio 2 Nanocoatingsmentioning

confidence: 99%

Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings

Карачевцева

Goltviansky

Kolesnyk

et al. 2014

Opto-Electronics Review

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We investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.

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Section: Macroporous Silicon Structures With Sio 2 Nanocoatingsmentioning

confidence: 99%

Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings

Карачевцева

Goltviansky

Kolesnyk

et al. 2014

Opto-Electronics Review

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“…86,87 A paper by A. G. Milekhin et al 86 provides a detailed study plasma activated interfaces during annealing. Four methods of activation are utilized, ambient O 2 plasma, O 2 RIE, NH 3 plasma, and RCA immersion.…”

Section: Ecs Journal Of Solid State Science and Technology 3 (4) Q42mentioning

confidence: 99%

“…The same group prepared a second paper in 2006. 86 This paper had a particular focus on the structure of the oxide interlayer during the annealing process.…”

Section: Subsequent High Temperature Annealing At 900mentioning

confidence: 99%

A Review of Hydrophilic Silicon Wafer Bonding

Masteika

Kowal

Braithwaite

et al. 2014

ECS J. Solid State Sci. Technol.

100

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Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-coated wafers together. This ability is a vital step in the construction of many microelectronic and microelectromechanical (MEMS) devices. In particular this technique is widely used in the production of 3d interconnected devices due to the lack of interlayer. © 2014 The Electrochemical Society. [DOI: 10.1149/2.007403jss] All rights reserved.Manuscript submitted June 5, 2013; revised manuscript received December 9, 2013. Published February 3, 2014 This review covers the key papers relating to the theory, techniques and quantification of hydrophilically activated silicon wafer bonding. This begins with a review of the history and development of the art. Bond strength characterization is then reviewed followed first by models of physical deformation and then by plasma and radical activation techniques.In the interests of clarity and succinctness this review is not an attempt to exhaustively catalog all direct bonding wafer literature. Excluded are hydrophobic and UHV bonding, and the many papers applying bonding techniques to differing combinations of wafer materials. This paper concludes with a summery of the state of the art of direct wafer bonding and a summation of the current wafer-bonding model derived from the papers reviewed. History and Establishment of the Art

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“…77 The peak at $2110 cm À1 corresponds to the stretching vibration of Si-H in dehydrate groups at the silicon surface. 78,79 The absorption peaks located at $2359, 3245 and 3492 cm À1 assigned to the H-O-H bending mode, symmetric and antisymmetric O-H mode of water. 67,80 The absorption peaks at $2809 and 3400 cm À1 are correspond to the typical O-H vibrations due to the adsorbed water molecule on the surface of MoO x QDs.…”

Section: Crystal Structure and Particle Size Analysismentioning

confidence: 99%