A Review of Hydrophilic Silicon Wafer Bonding

Masteika, V.; Kowal, Jan; Braithwaite, Nicholas; Rogers, Tony

doi:10.1149/2.007403jss

Cited by 100 publications

(79 citation statements)

References 123 publications

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“…12 shows schematic drawings of the mechanism of fluorine containing plasma activated bonding and its void formation during annealing. In our experiment, adding a small amount of CF 4 to O 2 plasma leads to an increasing of bonding strength at RT in our previous study. 10 It is known that fluorine radicals may generated from the discharged CF 4 .…”

Section: Resultssupporting

confidence: 59%

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A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

Wang

Liu

Suga

2016

ECS J. Solid State Sci. Technol.

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A quantitative evaluation of void formation in plasma activated bonding of 200-mm silicon wafers is demonstrated. As a comparison, the wafers were treated with oxygen plasma or fluorine containing oxygen plasma prior to bonding, respectively. The bonding was performed at the room temperature (∼25 • C), and all the bonded pairs were annealed from 200 to 800 • C. Results shows adding a small amount of fluorine into the oxygen plasma could decrease the hydrophilicity of the silicon surfaces, and effectively mitigate void formation at the bonding interfaces during the subsequent annealing process. Moreover, long plasma treatments (e.g. >60 s) may produce more porous surfaces resulting in more annealing voids. A short fluorine containing plasma treatment (e.g. ∼10 s) is able to remove organic contaminants efficiently and causes restricted hydrophilic surfaces with less subsurface damages. It may lead to much fewer voids at bonding interfaces during the annealing. Void formation models are proposed to gain insight the mechanism of the plasma activated bonding without and with fluorine, respectively.

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Section: Resultssupporting

confidence: 59%

“…It means the adding of CF 4 into O 2 plasma is effective to mitigate void formation whatever the annealing steps. The voids during the cumulative or single annealing steps are mainly initial trapped voids, caused by initial particle contaminates in our class 10 K clean room.…”

Section: Resultsmentioning

confidence: 99%

A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

Wang

Liu

Suga

2016

ECS J. Solid State Sci. Technol.

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“…Figure 4 shows a schematic diagram of the process. See [25,26,29,30] for reviews on silicon wafer bonding.…”

Section: B Silicon Direct Bondingmentioning

confidence: 99%

Deep reactive ion etched anti-reflection coatings for sub-millimeter silicon optics

et al. 2017

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Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced with an anti-reflection (AR) coating. In this work we report techniques for efficiently AR coating silicon at sub-millimeter wavelengths using Deep Reactive Ion Etching (DRIE) and bonding the coated silicon to another silicon optic. Silicon wafers of 100 mm diameter (1 mm thick) were coated and bonded using the Silicon Direct Bonding technique at high temperature (1100 C). No glue is used in this process. Optical tests using a Fourier Transform Spectrometer (FTS) show sub-percent reflections for a single-layer DRIE AR coating designed for use at 320 microns on a single wafer. Cryogenic (10 K) measurements of a bonded pair of AR-coated wafers also reached sub-percent reflections. A prototype two-layer DRIE AR coating to reduce reflections and increase bandwidth is presented and plans for extending this approach are discussed.

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“…4,5 The plasma generally contains a complex mixture of charged particles (ions and electrons) and neutrals (ground-and excited-state molecules, free radicals). 6 However, ions in the plasma bombardment are troublesome species causing surface damages, such as lattice damages, charging, and potential microdefects.…”

mentioning

confidence: 99%

Direct Homo/Heterogeneous Bonding of Silicon and Glass Using Vacuum Ultraviolet Irradiation in Air

Wang

et al. 2018

J. Electrochem. Soc.

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We develop a cost-effective vacuum ultraviolet (VUV) irradiation in air combined with an in situ bonding process. The whole bonding process does not require high vacuum environments. Strong bonding strengths for Si/Si, Si/glass, and glass/glass pairs were achieved with the assistance of annealing at 200 • C. There was no crack or defect at the bonding interfaces. The excellent optical transparency of the bonded glass/glass pairs was demonstrated in the UV-visible range. On the basis of the surface and bonding interface characterizations, the low-temperature bonding mechanism was investigated and discussed. Similar to the plasma activated bonding, the internal water stress corrosion plays a crucial role in the mechanical evolution of bonding interface between the VUV irradiated surfaces during annealing. This facile bonding method offers great potential for silicon-and glass-based homo/heterogeneous integrations in microelectronics, optoelectronics and microfluidics.

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A Review of Hydrophilic Silicon Wafer Bonding

Cited by 100 publications

References 123 publications

A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

Deep reactive ion etched anti-reflection coatings for sub-millimeter silicon optics

Direct Homo/Heterogeneous Bonding of Silicon and Glass Using Vacuum Ultraviolet Irradiation in Air

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