Using Dilute Nitrides to Achieve Record Solar Cell Efficiencies

Jones-Albertus, Rebecca; Becker, Emily; Bergner, Robert; Bilir, Taner; Derkacs, Daniel; Fidaner, Onur; Jory, David; Liu, Ting; Lucow, Ewelina; Misra, P.; Pickett, Evan; Suarez, Ferran; Sukiasyan, Arsen; Sun, Tianshu; Lan, Zhang; Sabnis, V.A.; Wiemer, M.; Yuen, H. B.

doi:10.1557/opl.2013.656

Cited by 15 publications

(10 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The final authenticated version is available online at: https://doi.org/10.1007/s11664-018-6325-3 2 multijunction solar cells. In particular, the current world record efficiency is 44% with a three junction GaInP/GaAs/GaInNAs(Sb) structure grown on GaAs [1]. However, the incorporation of N into GaInNAs is a challenging issue, since structural defects are easily generated; as a consequence, the layer electrical properties are degraded due to either native point defects with deep electronic levels in the bandgap [2], or to N-related defects [3].…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

Navarro

Martı́nez

Galiana

et al. 2018

Journal of Elec Materi

View full text Add to dashboard Cite

The effects of ex-situ annealing in N ambient and in-situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy (MBE) were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS did not reveal significant changes, within the error margin, with respect to the as-grown sample. The in-situ annealed in As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.

show abstract

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

Navarro

Martı́nez

Galiana

et al. 2018

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…In this work, we have applied the MPCS technique to high-quality triple junction GaInP/GaAs/GaInNAs solar cells [26,27] by designing and constructing a light-pipe-coupled LED array, consisting of various quasi-monochromatic LEDs that can be selected to be either electrically modulated (sinusoidal) or DC-driven. This setup has allowed us to perform frequency-dependent AC photocurrent measurements under appropriate light bias conditions for each subcell over a frequency range of 10 Hz to 200 kHz.…”

Section: Introductionmentioning

confidence: 99%

Frequency response of the external quantum efficiency in multijunction solar cells

Peraca¹,

Bilir²,

Hamadani³

2017

Opt. Express

View full text Add to dashboard Cite

The frequency dependence of the external quantum efficiency (EQE) of high-quality multijunction solar cells was examined by the modulated photocurrent spectroscopy method via an optical setup comprised of a light-pipe-coupled compact LED array. The optical excitation was achieved through sinusoidal electrical modulation of an appropriate LED by a custom-designed, high bandwidth amplifier. We observed unique features in the amplitude and phase data of the EQE frequency sweeps that are very sensitive to various subcell parameters and light bias conditions. These features are discussed extensively within the context of an AC equivalent circuit model, showing remarkable agreement between the experimental data and the proposed model.

show abstract

“…Monolithic and lattice-matched multijunction solar cells are attractive for fabrication simplicity and, hence, lower cost. Using dilute-nitride subcells is promising and has already shown high efficiencies in 3J solar cells grown by MBE [1], and combined MOVPE + MBE [2]. A GaInP/Ga(In)As/ GaNAsSb/Ge 4J solar cell, using the Ge substrate as an active subcell, conceptually consists on just adding the dilute nitride junction to the GaInP/Ga(In)As/Ge 3J solar cell.…”

Section: Introductionmentioning

confidence: 99%

Component Integration Effects in 4-Junction Solar Cells with Dilute Nitride 1eV Subcell

García

Ochoa

Lombardero

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

View full text Add to dashboard Cite

A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell is observed to suffer about 15% Jsc drop and ~50 mV Voc loss at 1-sun, while the Voc of the GaNAsSb subcell drops by as much as ~ 140 mV. The degradation of the Ge and GaNAsSb subcells in the current-matched 4J structure can hinder its efficiency potential to a higher extent than in the GaInP/Ga(In)As/Ge 3J. Besides, high quality GaNAsSb and Ge subcells would still limit the current and require redesigning the top subcells to achieve optimum efficiencies.

show abstract

Using Dilute Nitrides to Achieve Record Solar Cell Efficiencies

Cited by 15 publications

References 17 publications

Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

Frequency response of the external quantum efficiency in multijunction solar cells

Component Integration Effects in 4-Junction Solar Cells with Dilute Nitride 1eV Subcell

Contact Info

Product

Resources

About