Silicon oxide in SiSi bonded wafers

Himcinschi, Cameliu; Milekhin, A. G.; Friedrich, M.; Hiller, Karla; Wiemer, M.; Geßner, Thomas; Schulze, Steffen; Zahn, Dietrich R. T.

doi:10.1016/s0169-4332(01)00146-5

Cited by 10 publications

(13 citation statements)

References 17 publications

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“…The results of our calculation presented in Table 1 are in accordance with those presented in Ref. [17]. From comparison of the IR spectra of a sapphire substrate with those of samples A-C one can conclude that the shape of the IR spectra of the GaN/AlGaN SLs is strongly influences by reflection from the sapphire substrate.…”

Section: Resultssupporting

confidence: 89%

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IR reflection of optical phonons in GaN/AlGaN superlattices

Milekhin

Ladanov

Lundin

et al. 2004

phys. stat. sol. (c)

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We present the IR study of vibrational properties of GaN/Al 0.28 Ga 0.72 N superlattices with different thickness of superlattice layers. IR reflection spectra of the superlattices were taken at normal and off-normal incidence using p-polarised light in order to analyze optical phonons propagating both along and perpendicular to the layer surface. Optical phonon frequencies as well as thickness of the structure layers were determined from a comparison of the experimental IR reflection spectra to those calculated in the framework of the dielectric continuum model.

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Section: Resultssupporting

confidence: 89%

“…Details of calculations of IR reflection spectra of anisotropic samples can be found in Ref. [16,17].…”

Section: Resultsmentioning

confidence: 99%

IR reflection of optical phonons in GaN/AlGaN superlattices

Milekhin

Ladanov

Lundin

et al. 2004

phys. stat. sol. (c)

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“…Previous infrared studies observed the existence of an infrared band between 1050 and 1080 cm 2 1 , with the concurrent appearance of an infrared shoulder at 1200 cm 2 1 . [12][13][14][15][16][17][18][19][20][21] According to Kirk, 12 the main peak at 1080 cm 2 1 is a transverse optic (TO) type of absorption. The origin of this band and the accompanying shoulder is traced to the asymm etric stretching (AS) motion, which is described by the back-and-forth movement of the oxygen atoms along the line that connects the silicon atoms.…”

Section: Introductionmentioning

confidence: 99%

Molecular Composition and Orientation of Interstitial versus Surface Silicon Oxides for Si(111)/SiO₂ and Si(100)/SiO₂ Interfaces using FT-IR and X-ray Photoelectron Spectroscopies

et al. 2003

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This work represents a characterization study of silicon oxide on Si(111) and Si(100) surfaces intended for use as substrates in organic light-emitting diodes (OLEDs) on chip devices. Samples have been prepared using either native oxide formation or thermal oxidation, and they have also been treated for activation of hydroxyl groups on their surface. Both Fourier transform infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS) have been used in order to understand the molecular orientation as well as the chemical composition of the various oxide types formed during these different oxidation processes. These spectroscopic studies reveal the formation of two different types of oxides on these substrates. The first type is a thin oxide layer on the surface, whereas the second type, called interstitial, is found deeper in the substrate. Specifically, it was found that the Si(100) substrate forms a randomly oriented interstitial oxide, whereas the presence of a lower quantity but more oriented interstitial oxide was found for the Si(111) substrate. In addition, we report for the first time the position of the impurity oxygen for Si(111) substrates at 1122 cm(-1). Finally, in both Si(100) and Si(111) substrates, the thin (<15 A) silicon oxide layers are oriented and appear to contain silicon atoms of similar oxidation states. In contrast, both the thicker surface film (100 A) as well as the interstitial oxide produced by the thermal oxidation procedure show random orientation and relative uniformity. Overall these orientation studies clearly show that the formation process of surface oxides in different substrates clearly creates species that are oriented differently with respect to the surface.

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“…As the film thickness decreases, and the spectra preferentially probe the interface, compressive stress and suboxides may influence the shift of the TO and LO peaks [6][7][8][9][10][11]. However, the majority of the studies in this context either invoked interfacial strain [9][10][11] or sub-stoichiometry [6,8,12] as the dominant factor responsible for the thickness dependent changes in the infrared spectra.…”

Section: Introductionmentioning

confidence: 99%

Experimental and Theoretical Studies of the Si(100)/SiO₂ Interface Formed by Wet and Dry Oxidation

2002

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Interfacial strain and substoichiometric silicon oxides are the two principal causes that result in the redshift of the transverse and longitudinal optical phonons of the asymmetric stretch of O in the Si-O-Si bridging bond of thermal SiO 2 with decreasing oxide thickness. Analyses to comprehend these effects, therefore, require consideration of both strain and interfacial substoichiometry. A method to isolate the contributions of strain and suboxide content towards the observed shifts is proposed. The procedure, which utilizes simple optical model and effective medium approximation, allows estimation of the average strain and suboxide concentration in films of different thickness. Analyses of oxides formed at two different temperatures (550 and 700°C) with dry and wet oxygen reveal how process conditions affect the interface properties.

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Silicon oxide in SiSi bonded wafers

Cited by 10 publications

References 17 publications

IR reflection of optical phonons in GaN/AlGaN superlattices

IR reflection of optical phonons in GaN/AlGaN superlattices

Molecular Composition and Orientation of Interstitial versus Surface Silicon Oxides for Si(111)/SiO₂ and Si(100)/SiO₂ Interfaces using FT-IR and X-ray Photoelectron Spectroscopies

Experimental and Theoretical Studies of the Si(100)/SiO₂ Interface Formed by Wet and Dry Oxidation

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Silicon oxide in SiSi bonded wafers

Cited by 10 publications

References 17 publications

IR reflection of optical phonons in GaN/AlGaN superlattices

IR reflection of optical phonons in GaN/AlGaN superlattices

Molecular Composition and Orientation of Interstitial versus Surface Silicon Oxides for Si(111)/SiO2 and Si(100)/SiO2 Interfaces using FT-IR and X-ray Photoelectron Spectroscopies

Experimental and Theoretical Studies of the Si(100)/SiO2 Interface Formed by Wet and Dry Oxidation

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Molecular Composition and Orientation of Interstitial versus Surface Silicon Oxides for Si(111)/SiO₂ and Si(100)/SiO₂ Interfaces using FT-IR and X-ray Photoelectron Spectroscopies

Experimental and Theoretical Studies of the Si(100)/SiO₂ Interface Formed by Wet and Dry Oxidation