High-efficiency multijunction solar cells employing dilute nitrides

Sabnis, V.A.; Yuen, H. B.; Wiemer, M.

doi:10.1063/1.4753823

Cited by 117 publications

(72 citation statements)

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“…Lattice-matched (LM) triple junction solar cells that incorporate dilute nitrides have reached efficiencies of 43.5% at 418 suns by using a GaInP/GaAs/GaInNAs triple junction structure grown on inactive GaAs substrates [1]. This efficiency can be exceeded using a 4-Junction device including a dilute nitride 1eV subcell which can be grown on an active germanium substrate.…”

Section: Introductionmentioning

confidence: 99%

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

Ochoa¹,

García²,

Lombardero³

et al. 2016

AIP Conference Proceedings

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Abstract. Technology Computer Aided Design modeling is used to examine the performance under light concentration of a 4-J solar cell Ge-based that includes a 1-eV MBE-grown dilute nitride subcell. The 1-eV solar cell is modeled and examined by using material parameters extracted from detailed electro-optical characterization prior to be included into a multijunction structure. The modelling reveals the impact of the electric field-assisted collection in the performance of single junction solar cells and its effect when included in a 4-Junction solar cells. This effect is responsible for the lower FF (~15% lower) in the 4J when including the dilute nitride subcell, especially if it limits the photocurrent. Finally, an optimization procedure based on dilute nitrides with higher material quality is performed resulting in a 4-Junction solar cell with an efficiency of 47% for concentrations between 1000-2000 suns direct terrestrial spectrum.

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Section: Introductionmentioning

confidence: 99%

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

Ochoa¹,

García²,

Lombardero³

et al. 2016

AIP Conference Proceedings

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“…One of the most promising near-term routes for integration of III-V solar cells on Si substrate would be to create virtual "GaAs-on-Si" substrate for the subsequent growth of state-of-the-art 3J InGaP/GaAs/InGaAsNSb solar cells (which are 44% efficient under 947 suns when grown on GaAs substrate (Sabnis, Yuen, and Wiemer 2012)) which are lattice-matched to GaAs as shown in Figure 20(a). Although this approach would utilize the Si substrate as a passive template, such an approach could leverage commercially available GaAs substrate re-use techniques for additional cost reduction (Shahrjerdi et al 2012;Tatavarti et al 2010).…”

Section: Future Outlookmentioning

confidence: 99%

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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“…Very high-cost manufacturing is the factor that limited its utilization. This type of solar cell has reportedly delivered a high conversion efficiency of 43.5% at 925 suns (925 kW/m 2 , AM1.5D) milestone [2]. In order to make it cost-effective, a developed concentrator technology which commonly uses Fresnel lens to concentrate sunlight onto a small area of cell is the standard.…”

Section: Introductionmentioning

confidence: 99%

Impact of spectral irradiance distribution and temperature on the outdoor performance of concentrator photovoltaic system

Husna¹,

Shibata²,

Sawano³

et al. 2013

AIP Conference Proceedings

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High-efficiency multijunction solar cells employing dilute nitrides

Cited by 117 publications

References 0 publications

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Impact of spectral irradiance distribution and temperature on the outdoor performance of concentrator photovoltaic system

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