A patterned GaN/sapphire template with separate regions angled between 0.4 and 2 to the wurtzite c-plane was used to grow a 50 nm In 0:1 Ga 0:9 N layer. The photoluminescence wavelength varied between 403 and 389 nm according to the increased region's angle. The indium content measured using X-rays was reduced in regions with a higher miscut angle. Patterned freestanding GaN with separate regions angled by 0.35 and 0.85 to the c-plane was used to fabricate ridge-waveguide diode lasers. Each laser stripe was placed inside one of the angled regions. Lasing wavelengths of 405:8 AE 0:2 and 401:0 AE 1 nm were obtained for devices grown in those regions.
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