This paper summarizes the knowledge how off‐orientation involving lattice planes not parallel to the surface influences properties of AlGaN and InGaN layers. The following issues are presented: (i) morphology of GaN and InGaN layers, (ii) unit cell deformation in AlGaN and InGaN layers, (iii) cracking of AlGaN layers, and (iv) In incorporation into InGaN layers. Finally, laterally patterned on‐axis c ‐plane GaN substrates were successfully used to construct violet laser diodes as well as first multicolour laser diode arrays. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A patterned GaN/sapphire template with separate regions angled between 0.4 and 2 to the wurtzite c-plane was used to grow a 50 nm In 0:1 Ga 0:9 N layer. The photoluminescence wavelength varied between 403 and 389 nm according to the increased region's angle. The indium content measured using X-rays was reduced in regions with a higher miscut angle. Patterned freestanding GaN with separate regions angled by 0.35 and 0.85 to the c-plane was used to fabricate ridge-waveguide diode lasers. Each laser stripe was placed inside one of the angled regions. Lasing wavelengths of 405:8 AE 0:2 and 401:0 AE 1 nm were obtained for devices grown in those regions.