Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning

Abstract

A patterned GaN/sapphire template with separate regions angled between 0.4 and 2 to the wurtzite c-plane was used to grow a 50 nm In 0:1 Ga 0:9 N layer. The photoluminescence wavelength varied between 403 and 389 nm according to the increased region's angle. The indium content measured using X-rays was reduced in regions with a higher miscut angle. Patterned freestanding GaN with separate regions angled by 0.35 and 0.85 to the c-plane was used to fabricate ridge-waveguide diode lasers. Each laser stripe was placed inside one of the angled regions. Lasing wavelengths of 405:8 AE 0:2 and 401:0 AE 1 nm were obtained for devices grown in those regions.

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

“…The laser diodes based on InGaN quantum wells (QWs) and made on HNPS-MFS-GaN substrates (by MOVPE technology) emit at 390 nm to 420 nm, have a typical threshold voltage of 4.5 V at 2.5 kA/cm 2 and a lifetime of up to 5000 hours 28 . The HNPS-MFS-GaN crystals are also used for preparing undulated substrates (with locally controlled miscut from 0 to 2 degree) 29 . Laser diodes made on them emit from 400 nm to 410 nm at threshold voltage of 5.5 V and 4 kA/cm 2 .…”

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

“…The HNPS-MFS-GaN crystals have been also used for preparing undulated substrates (with locally controlled miscut) [45]. Laser diodes made on them emitted from 400 to 410 nm at a threshold voltage of 5.5 V and 4 kA cm À2 .…”

Monolithic cyan − violet InGaN/GaN LED array

“…a). Similar substrate has been applied previously to demonstrate two‐wavelength laser diodes . In that work, however, the achieved wavelength variation was only 5 nm, while in the present work it is 40 nm.…”