The influence of lattice parameter variation on microstructure of GaN single crystals

Kryśko, M.; Sarzynski, M.; Domagała, J. Z.; Grzegory, I.; Łucznik, B.; Kamler, G.; Porowski, S.; Leszczyński, M.

doi:10.1016/j.jallcom.2004.10.077

Cited by 36 publications

(27 citation statements)

References 5 publications

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“…A GaN single crystal (5 mm × 5 mm × 1 mm) with extremely low dislocation density (<10 4 cm −2 ) was grown by TopGaN Co., which applied the HVPE (Hydride Vapor Phase Epitaxy) method [27][28][29][30]. The largest surface of the crystal was confirmed to be C (0001) plane by X-ray diffractions, and nanoindentation tests were performed on the surface with the Hysitron TriboIndenter system (the details of the apparatus reported in [31]).…”

Section: Methodsmentioning

confidence: 99%

Elastic–plastic transition during nanoindentation in bulk GaN crystal

Fujikane

Leszczyński

Nagao

et al. 2008

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Elastic–plastic transition during nanoindentation in bulk GaN crystal

Fujikane

Leszczyński

Nagao

et al. 2008

Journal of Alloys and Compounds

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“…[42] The incorporation of oxygen into the lattice and resulting generation of free electrons will also contribute to an expansion of the lattice constants. [40,[62][63][64] While this may not negatively impact thin film epitaxial layers grown on these substrates, thick, bulk growth may be challenging as minor lattice constants mismatch may lead to substantial strain buildup in the thick boules resulting in energy release via crack formation. This will be discussed in more detail in Section 3.2.…”

Section: Progress Reportmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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“…5) suffer from the uncertainties in the elastic constants and differ between each other depending on the assumption made, remaining smaller than the lattice parameters of the HVPE bulk GaN. Furthermore, homoepitaxial HVPE-GaN grown on HP-GaN was reported to have smaller lattice parameters than the HP-GaN substrate [22]. This may suggest that specific growth conditions and the choice of substrate may also affect the lattice parameters.…”

Section: Comparison With Hp Bulk Ganmentioning

confidence: 99%

“…The lattice parameters of HP bulk GaN and homoepitaxial GaN have been extensively studied [15,[20][21][22]. The GaN crystals grown by the HP method exhibit a very low dislocation density ð10 2 -10 4 cm À2 Þ, but typically show a high free-electron concentration 410 19 cm À3 (related to high O incorporation) [20,21].…”

Section: Introductionmentioning

confidence: 99%