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The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2–xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2–xNx films with increasing x are found by X‐ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X‐ray photoelectron spectroscopy, attributed to the N3− ion in the SnN bond. The increase of the N atomic concentration x in SnO2–xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.

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