“…In conclusion, we have shown with a spectroscopic high-pressure approach that phase segregation can be probed in as grown thin films of phase separated Mg 0.3 Zn 0.7 O even for small embedded volumes not detected by x-ray diffraction and not accessible by transmission electron microscopy except with annealed samples [14]. We have solved the controversy about the lowenergy absorption tail usually observed overlapping with the main absorption edge for x > 0.3.…”
Section: Discussionmentioning
confidence: 71%
“…1 (c)]. According to Gries et al [14] the presence of phase separation in Mg x Zn 1−x O would give rise to the appearance of segregated wurtzite phase with less Mg content. This would result into the appearance of a second PL peak at lower energies.…”
Section: Resultsmentioning
confidence: 99%
“…ZnO crystallizes in the hexagonal wurtzitetype structure while MgO crystallizes in the cubic rocksalt-type structure. Therefore, once the solubility limit is reached in wurtzite-type Mg x Zn 1−x O solid solution, ∼ 4% in bulk [12] and ∼ 30% or ∼ 50% in thin films depending on the growth method [8,13], phase separation appears [14] and both rock-salt and wurtzite type phases coexist. A lot of effort has been put on trying to reach the highest incorporation limit of Mg 2+ in phase pure wurzite-type Mg x Zn 1−x O.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the origin of the observed low-energy absorption tail remains unclear. The study of Gries et al [14] has success- * Electronic address: javier.ruiz-fuertes@uv.es fully employed transmission electron microscopy (TEM) on thermally annealed Mg 0.3 Zn 0.7 O thin films grown by molecular beam epitaxy (MBE) to investigate the microscopic effect of having phase separation. They found that the coexistence of the wurtzite and rock-salt phases in Mg x Zn 1−x O due to phase separation gives rise to the existence of an secondary wurtzite-type phase, with a reduced Mg content of x ≈ 0.15 determined by TEM energy dispersive x-ray spectroscopy (EDX).…”
Section: Introductionmentioning
confidence: 99%
“…The volume of this segretated wutzite phase was too low to be detected by XRD and it was embedded in the thin film preventing selective access with TEM. For this reason, Gries et al [14] had to employ a buffer layer of MgO/ZnO to promote the growth of a segregated wurtzite phase in the Mg x Zn 1−x O thin film, after annealing the sample at 950…”
The appearance of segregated wurtzite MgxZn1−xO with low Mg content in thin films with x > 0.3 affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite MgxZn1−xO thin films with different Mg contents to unveil phase segregation for x > 0.3. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for x = 0.3 we show that the appearance of a segregated wurtzite phase with a magnesium content of x ∼ 0.1 is inherent to the wurtzite and rocksalt phase separation. We also show that the presence of segregated wurtzite phase in oversaturated thin films phase is responsible for the low-energy absorption tail observed above x = 0.3 in our MgxZn1−xO thin films. Our study has also allowed us to extend the concentration dependence of the pressure coefficient of the band gap from the previous limit of x = 0.13 to x ≈ 0.3 obtaining dEg/dP = 29 meV/GPa for wurtzite with x ≈ 0.3 and 25 meV/GPa for the segregated x ≈ 0.09 wurtzite phase.
“…In conclusion, we have shown with a spectroscopic high-pressure approach that phase segregation can be probed in as grown thin films of phase separated Mg 0.3 Zn 0.7 O even for small embedded volumes not detected by x-ray diffraction and not accessible by transmission electron microscopy except with annealed samples [14]. We have solved the controversy about the lowenergy absorption tail usually observed overlapping with the main absorption edge for x > 0.3.…”
Section: Discussionmentioning
confidence: 71%
“…1 (c)]. According to Gries et al [14] the presence of phase separation in Mg x Zn 1−x O would give rise to the appearance of segregated wurtzite phase with less Mg content. This would result into the appearance of a second PL peak at lower energies.…”
Section: Resultsmentioning
confidence: 99%
“…ZnO crystallizes in the hexagonal wurtzitetype structure while MgO crystallizes in the cubic rocksalt-type structure. Therefore, once the solubility limit is reached in wurtzite-type Mg x Zn 1−x O solid solution, ∼ 4% in bulk [12] and ∼ 30% or ∼ 50% in thin films depending on the growth method [8,13], phase separation appears [14] and both rock-salt and wurtzite type phases coexist. A lot of effort has been put on trying to reach the highest incorporation limit of Mg 2+ in phase pure wurzite-type Mg x Zn 1−x O.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the origin of the observed low-energy absorption tail remains unclear. The study of Gries et al [14] has success- * Electronic address: javier.ruiz-fuertes@uv.es fully employed transmission electron microscopy (TEM) on thermally annealed Mg 0.3 Zn 0.7 O thin films grown by molecular beam epitaxy (MBE) to investigate the microscopic effect of having phase separation. They found that the coexistence of the wurtzite and rock-salt phases in Mg x Zn 1−x O due to phase separation gives rise to the existence of an secondary wurtzite-type phase, with a reduced Mg content of x ≈ 0.15 determined by TEM energy dispersive x-ray spectroscopy (EDX).…”
Section: Introductionmentioning
confidence: 99%
“…The volume of this segretated wutzite phase was too low to be detected by XRD and it was embedded in the thin film preventing selective access with TEM. For this reason, Gries et al [14] had to employ a buffer layer of MgO/ZnO to promote the growth of a segregated wurtzite phase in the Mg x Zn 1−x O thin film, after annealing the sample at 950…”
The appearance of segregated wurtzite MgxZn1−xO with low Mg content in thin films with x > 0.3 affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite MgxZn1−xO thin films with different Mg contents to unveil phase segregation for x > 0.3. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for x = 0.3 we show that the appearance of a segregated wurtzite phase with a magnesium content of x ∼ 0.1 is inherent to the wurtzite and rocksalt phase separation. We also show that the presence of segregated wurtzite phase in oversaturated thin films phase is responsible for the low-energy absorption tail observed above x = 0.3 in our MgxZn1−xO thin films. Our study has also allowed us to extend the concentration dependence of the pressure coefficient of the band gap from the previous limit of x = 0.13 to x ≈ 0.3 obtaining dEg/dP = 29 meV/GPa for wurtzite with x ≈ 0.3 and 25 meV/GPa for the segregated x ≈ 0.09 wurtzite phase.
Zinc oxide has long been considered a promising wide bandgap semiconductor for optoelectronic applications in the UV range of wavelengths. On the other hand, Eu-doped ZnO has appeared to be an interesting material for red light applications. In this work, we are looking for a way to increase the red emission from ZnO:Eu by adding Mg to the ZnO host. We explore the effect of tunable wide-bandgap semiconductor host-Zn 1−x Mg x O on the photoexcitation−emission properties of dopant-europium ions. Eu-doped Zn 1−x Mg x O thin films with various Mg compositions were epitaxially grown on a-Al 2 O 3 substrates via oxygen plasma-assisted molecular beam epitaxy. The elemental composition was modified during growth by varying the Zn and Mg fluxes at a constant oxygen flow or by changing the oxygen flow at fixed Zn and Mg fluxes. The Eu doping level is nearly constant at 0.6 ± 0.1 at %. X-ray photoemission spectroscopy measurements show that europium doped in Zn 1−x Mg x O thin films are present in Eu 3+ /Eu 2+ ionic states. Further, the ZnMgO:Eu thin films are explored through X-ray diffraction and scanning electron microscopy analyses. Photoluminescence (PL) analysis shows that the intensity of the 5 D 0 − 7 F 2 red emission of the Eu 3+ ions depends critically on the Mg content. When the bandgap energy of Zn 1−x Mg x O:Eu samples varies from 3.61 to 4.00 eV, the Eu 3+ PL intensity presents nearly a 60-fold increase. We interpret the increased PL efficiency of Eu 3+ as a function of the Mg composition in terms of host-exciton energy transfer to the higher energy levels of Eu ions. The efficient energy transfer to Eu ions is attributed to the increased oscillator strength of excitons and their strong localization in Zn 1−x Mg x O due to the local fluctuations in the Mg content within the material.
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