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Articles you may be interested inCompositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasmaenhanced chemical vapor deposition technique J. Vac. Sci. Technol. A 23, 545 (2005); 10.1116/1.1901665Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties Deposition of single phase, homogeneous silicon oxynitride by remote plasmaenhanced chemical vapor deposition, and electrical evaluation in metal-insulator-semiconductor devices

The role of chemisorbed hydrogen in the enhancement of low-energy electron emission from natural type IIb C(001) diamond surfaces has been investigated. A hydrogen induced low-energy emission peak, whose intensity was found to be a linear function of surface coverage, was observed. The direct observation of emission from vacuum level states in the photoemission spectra has determined a negative electron affinity of ∼0.4 eV for the hydrogenated C(001)-1×1 surface. Constant initial states photoemission has unambiguously identified the electron emission process with the escape of electrons from bulk electron states at the conduction-band minimum.

Articles you may be interested inInherent interface defects in thermal (211) Si / SiO 2 : 29 Si hyperfine interaction AIP Conf.

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