The role of an ultrathin silicon interlayer at the SiO2-Ge interface

Hattangady, S. V.; Mantini, M. J.; Fountain, G. G.; Rudder, R. A.; Markunas, R. J.

doi:10.1063/1.350874

Cited by 23 publications

(11 citation statements)

References 35 publications

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“…From earlier work, it is known that an oxide free Ge surface prior to the deposition of a-Si:H is important to obtain good passivation. 3,69 For this purpose, we investigated two wet-chemical surface cleans to remove the native oxide from Ge surface prior to deposition of a-Si:H [1% aqueous hydrofluoric acid (HF) for 90 s and 20% aqueous hydrogen bromide (HBr) for 90 s] and compared these to the case of no surface clean. We found an inverse correlation between the amount of germanium oxide on the surface prior to a-Si:H deposition and the lifetime of the Ge wafer passivated by a-Si:H. This indicates that removal of germanium oxide is indeed important to achieve good surface passivation by a-Si:H (see Figs.…”

Section: Methodsmentioning

confidence: 99%

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Berghuis

Melskens

Macco

et al. 2021

Journal of Applied Physics

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Section: Methodsmentioning

confidence: 99%

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Berghuis

Melskens

Macco

et al. 2021

Journal of Applied Physics

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“…Scratch tests further showed better adherence of DLC coatings on Ti 6 Al 4 V substrates when a 20 nm Si interlayer was used [9]. In other applications, Si interlayers have also been used to improve the electrical properties at the germanium/silicon dioxide interface of photonic devices [10,11] .…”

Section: Introductionmentioning

confidence: 99%

A methodology for characterizing the electrochemical stability of DLC coated interlayers and interfaces

Ilic

Pardo

Suter

et al. 2019

Surface and Coatings Technology

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“…10,11 In order to avoid the subcutaneous oxidation of Ge, a remote rf plasma was used to first deposit a pseudomorphic Si interlayer between SiO 2 and Ge, in order to avoid Ge oxidation. [12][13][14][15] In the present study, we address several questions relative to the subcutaneous oxidation phenomena, such as the effects of time, temperature, and ion energy on subcutaneous oxidation. Also, if a Si interlayer is necessary to prevent subcutaneous Ge oxidation, how thick of an interlayer is sufficient?…”

Section: Introductionmentioning

confidence: 99%

In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

Wang

Irene

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In situ real time single wavelength ellipsometry and spectroscopic ellipsometry were used to monitor electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2 on Si and Ge at substrate temperatures from floating temperature (<50 °C) to 400 °C. Dielectric layers were evaluated by capacitance–voltage measurements. Single wavelength ellipsometry and x-ray photoelectron spectroscopy results show that oxidation occurred along with SiO2 deposition at the initial stage of plasma enhanced chemical vapor deposition. The real time oxidation analysis shows that the subcutaneous oxidation follows parabolic growth kinetics during SiO2 deposition. The parabolic rate coefficient is proportional to the voltage drop across the subcutaneous oxide layer, and yields temperature activated transport. The subcutaneous oxidation of Ge yields a Ge rich oxide that degrades the electrical properties of metal–oxide capacitors. A thin Si layer deposited at room temperature before SiO2 deposition protects the Ge surface from undesirable oxidation during SiO2 deposition. The required thickness of Si layer is predicted. Electron cyclotron resonance plasma oxidation at 400 °C after SiO2 deposition reduces the slow trap states. An Al/SiO2/Si/Ge structure shows improved electrical properties of metal–oxide Ge capacitors. For c-Si substrates, a rapid thermal anneal of the deposited SiO2 in high vacuum can effectively eliminate the OH group incorporation, and thus reduces both interface trapped charge and slow trap states.

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The role of an ultrathin silicon interlayer at the SiO2-Ge interface

Abstract: Articles you may be interested inInherent interface defects in thermal (211) Si / SiO 2 : 29 Si hyperfine interaction AIP Conf.

Cited by 23 publications

References 35 publications

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

A methodology for characterizing the electrochemical stability of DLC coated interlayers and interfaces

In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

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