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Articles you may be interested inEffects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition

We have developed a low temperature process for the deposition of thin films of silicon dioxide and silicon nitride. The process consists of four steps: (a) excitation of an oxygen or nitrogen-containing molecule in an RF plasma; (b) transport of the excited oxygen or nitrogen species out of the plasma region; (c) mixing of the transported excited species with silane (or disilane) out of the plasma region to form precursor species; and (d) a CVD reaction at a heated substrate to form the desired thin film. We call this process remote plasma enhanced CVD (RPECVD). Silicon rich oxide films have been grown at substrate temperatures (Ts) between 100 and 350 °C using an excited O2/He mixture. Two different ‘‘silicon nitrides’’ have been deposited depending on the excited gas, NH3 or an N2/He mixture, and Ts. Using either nitrogen source and Ts greater than 450 °C, we obtain near stoichiometric films of Si3N4. On the other hand, films grown from NH3 and deposited with Ts of about 50 to 100 °C are silicon diimide [Si(NH)2], which is isostructural with respect to SiO2 with bridging NH groups substituted for the bridging oxygen atoms. Films grown from the NH3 source and at Ts between 150 and 450 °C are solid solutions of silicon nitride and silicon diimide. We discuss the application of these dielectric films in device structures.

We have deposited thin films of SiO2 by remote plasma-enhanced chemical vapor deposition and have identified similar infrared (IR) spectroscopic signatures of Si–OH groups incorporated during either film growth, or the cooling down process in the deposition chamber. These films can also be hygroscopic and, on postdeposition exposure to atmospheric water vapor, they show changes in the IR spectra associated with the incorporation of additional Si–OH groups. These changes are (i) the development of a new symmetric feature, centered at about 3350 cm−1, within the asymmetric O–H stretching band generated during growth and/or cooling down; (ii) the development of a new spectral feature at 925 cm−1; and (iii) a shift in the Si–O bond-stretching band to higher wavenumber. We show that the first two changes in the IR spectra are due to near-neighbor Si–OH bonding groups that result from the reaction between water vapor and the Si–O–Si bonds of the SiO2 host network. These spatially correlated Si–OH groups have different spectral features, due to relatively strong hydrogen bonding interactions, from the randomly distributed Si–OH groups that are incorporated initially during film growth and/or cooling down. The shift in the frequency of the Si–O stretching band derives from a preferential reaction of water with strained and highly reactive Si–O–Si bonding groups, i.e., those with the smallest Si–O–Si bond angles which are attacked by water vapor, resulting in the formation of near–neighbor pairs of Si–OH bonding groups.