Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">r</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>:H (0&lt;<i>r</i>&lt;2) alloy system

Tsu, D. V.; Lucovsky, G.; Davidson, B. N.

doi:10.1103/physrevb.40.1795

Cited by 408 publications

(189 citation statements)

References 18 publications

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“…This margin has been reported to be in the range of the stretching band values for SiO 2 films. 18,24 The dependence of the FWHM with RTA is also completely different from that exhibited for both the SiO 2 film and the near-stoichiometric one. Up to 700°C, the FWHM increases with RTA temperature and for higher values, the FWHM decreases, but for the range of annealing temperatures studied the FWHM is always above 110 cm Ϫ1 .…”

Section: Resultsmentioning

confidence: 92%

“…The peak position of the main SiuOuSi stretching band was used as a measure of the oxygen to silicon ratio (O/Siϭx) of the as-grown films following the papers of the North Carolina State University group. 1,18 Electron spin resonance ͑ESR͒ characterization was performed at room temperature with a Bruker ESP 300E spectrometer operating in the X band at a microwave power of 0.5 mW which is low enough to prevent the saturation of the signal. In order to enhance the ESR signal, each film used was cut in five pieces of 0.2ϫ1 cm after annealing.…”

Section: Methodsmentioning

confidence: 99%

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Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Andrés

Prado

Mártil

et al. 2002

Journal of Applied Physics

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The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed ͑RTA͒ SiO x :H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600°C without any change in the oxygen to silicon ratio of the films. The activation energy of the hydrogen release is in the 0.21-0.41 eV range independently of film composition, suggesting that the process occurs via network bond reactions. For annealing temperatures higher than 700°C, a change in the Si-O-Si stretching wave number from the initial unannealed value to the 1070-1080 cm Ϫ1 range was promoted, independently of the initial film composition. Electron spin resonance measurements showed that all the films contain two type of bulk paramagnetic defects: the EЈ center (•SiwO 3 ) and the silicon dangling bond center (•SiwSi 3 ). The RTA process promotes a general decrease of defect concentration for annealing temperatures below 400°C. At higher temperatures, EЈ center disappears, and the •SiwSi 3 center increases its concentration up to the 10 17 -10 18 cm Ϫ3 range. This suggests that the RTA at higher temperatures promotes the formation of a high-quality, almost defect-free, SiO 2 matrix in which highly defective Si nanocrystals are also formed, where the •SiwSi 3 centers are located.

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Section: Resultsmentioning

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Andrés

Prado

Mártil

et al. 2002

Journal of Applied Physics

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“…Both bands show a single peak which shifts to higher wave numbers as the composition changes from SiN y H z to SiO 2 . This behavior is characteristic of single-phase homogeneous SiO x N y H z , and is due to the higher electronegativity of O with respect to N. 1,26,27 It is concluded that the H is not incorporated in any specific configuration, but the Si-H and N-H bonds appear with different chemical environments, as determined by the random bonding model and the composition of the films.…”

Section: B Ftir Resultsmentioning

confidence: 98%

Influence of H on the composition and atomic concentrations of “N-rich” plasma deposited SiOxNyHz films

Prado

Andrés

Mártil

et al. 2004

Journal of Applied Physics

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The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiOxNyHz films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute concentrations of all the species present in the SiOxNyHz, including H, was measured by heavy-ion elastic recoil detection analysis (HI–ERDA). Samples were deposited from SiH4, O2, and N2 gas mixtures, with different gas flow ratios in order to obtain compositions ranging from SiNyHz to SiO2. Those samples deposited at higher SiH4 partial pressures show both Si–H and N–H bonds, while those deposited at lower SiH4 partial pressures show N–H bonds only. The Si–H and N–H bond concentrations were found to be proportional to the N concentration. The concentration of H was evaluated from the Si–H and N–H stretching absorption bands and compared to the HI–ERDA results, finding good agreement between both measurements. The deviation from H-free stoichiometric SiOxNy composition due to the presence of N–H bonds results in an effective coordination number of N to produce Si–N bonds lower than 3. By fitting the experimental composition data to a theoretical model taking into account the influence of N–H bonds, the actual concentration of N–H bonds was obtained, making evident the presence of nonbonded H. The presence of Si–H and Si–Si bonds was found to partially compensate the effect of N–H bonds, from the point of view of the relative N and Si contents. Finally, the presence of N–H bonds results in a lower Si atom concentration with respect to the stoichiometric film, due to a replacement of Si atoms by H atoms. This decrease of the Si concentration is lower in those films containing Si–H and Si–Si bonds. A model was developed to calculate the Si, O, and N atom concentrations taking into account the influence of N–H, Si–H, and Si–Si bonds, and was found to be in perfect agreement with the experimental data measured by HI–ERDA.

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“…In addition, a small peak near 900 cm -1 is also visible for the as-deposited film only in the far-IR spectrum (see inset of Fig. 2(a)) which could be assigned to (at least) one of three possible modes previously observed in SiH 4 -based films: Si-N stretching mode from unintentional N doping [14], Si-H wagging mode [15] or a Si-O/Si-OH non-bridging stretching mode [16]. However, Si-N can be ruled out based on XPS results presented below which indicates no detectable N in the films, while the Si-H wagging mode should also produce a corresponding Si-H stretching mode at 2265 cm -1 which we did not observe in any of the films studied.…”

Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 97%

Correlation of UV damage threshold with post-annealing in CVD-grown SiO₂ overlayers on etched fused silica substrates

et al. 2012

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Chemical vapor deposition (CVD) has been used for the production of fused silica optics in high power laser applications. However, relatively little is known about the ultraviolet (UV) laser damage threshold of CVD films and how they relate to intrinsic defects produced during deposition. We present a study relating structural and electronic defects in CVD films to the 355 nm pulsed laser damage threshold as a function of post-deposition annealing temperature (T HT ). Plasma-enhanced CVD, based on SiH 4 /N 2 O under oxygen-rich conditions, was used to deposit 1.5, 3.1 and 6.4 m thick films on etched SiO 2 substrates. Rapid annealing was performed using a scanned CO 2 laser beam up to T HT~2 100 K. The films were then characterized using X-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and photoluminescence (PL). A gradual transition in the damage threshold of annealed films was observed at T HT up to 1600 K, correlating with a decrease in NB silanol and broadband PL emission. An additional sharp transition in damage threshold also occurs at ~1850 K indicating substrate annealing. Based on our results, a mechanism for damage-related defect annealing is proposed, and the potential of using high-T HT CVD SiO 2 to mitigate optical damage is also discussed.

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Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphousSiOr:H (0<r<2) alloy system

Cited by 408 publications

References 18 publications

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Influence of H on the composition and atomic concentrations of “N-rich” plasma deposited SiOxNyHz films

Correlation of UV damage threshold with post-annealing in CVD-grown SiO₂ overlayers on etched fused silica substrates

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Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphousSiOr:H (0<r<2) alloy system

Cited by 408 publications

References 18 publications

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Influence of H on the composition and atomic concentrations of “N-rich” plasma deposited SiOxNyHz films

Correlation of UV damage threshold with post-annealing in CVD-grown SiO2 overlayers on etched fused silica substrates

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Correlation of UV damage threshold with post-annealing in CVD-grown SiO₂ overlayers on etched fused silica substrates