Hole-drift-type Si IMPATT diodes were fabricated and their oscillation characteristics were examined. Doping structure of the diodes was p+ -p-n+. The wafer was made by thermal diffusion and ion implantation into n- on n+ epitaxial wafer. The diode thickness was made thin, 5∼10 µm, to reduce series resistance. Continuous wave oscillation was observed in wide frequency range from 70 GHz to near 400 GHz. Output powers of 82 mW at 187 GHz with an efficiency of 2.5% and 7.5 mW at 285 GHz were obtained. The highest oscillation frequency measured to date is 394 GHz.
The properties of fullydepleted CMOS/SIMOX devices as low-power high-performance VLSI components are presented. When compared with bulk devices the steeper subthreshold slope of the SIMOX device allows one to enhance the performance of multipliers and SRAMs at low supply voltages without increasing the leakage current. The controllability of the threshold voltage statistical spreading and the standby leakage current of SIMOX LSI is also demonstrated.
This paper describes a lowskew clock distribution technique for multiple targets using an autoniatic skew-compensation circuit. Lsing this t,echnique keeps clock skew among multiple targets below the resolution time of the variable delay lines without any manual adjustment. Measured results show that the initial clock skew of 0.9 ns is cancelled automat,ically and 30 ps clock skew is achieved at a clock frequency of up t o 250 MHz with 60 ps clock jitter.
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