Substantial advantages of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components compared with its bulk-CMOS counterpart

Abstract

The properties of fullydepleted CMOS/SIMOX devices as low-power high-performance VLSI components are presented. When compared with bulk devices the steeper subthreshold slope of the SIMOX device allows one to enhance the performance of multipliers and SRAMs at low supply voltages without increasing the leakage current. The controllability of the threshold voltage statistical spreading and the standby leakage current of SIMOX LSI is also demonstrated.

Deep sub-0.1-�m MOSFETs with very thin SOI layer for ultralow-power applications

“…6, the parameters of FD SOI MOSFETs fabricated to date are also plotted [4,11]. It is seen that these devices almost fully agree with the proposed scaling scenario.…”

Ultralow‐power CMOS/SOI circuit technology

“…To reduce power, a combination of a fully depleted (FD-type) SOI device with its superior low-power operation and the technology used in low-voltage circuits is extremely effective [2]. This device is formed using an MOS transistor on a Si thin wafer with a thickness of about 50 nm on a Si-oxide film.…”

Recent progress and future prospects of SOI CMOS

“…Depending on whether this difference is used to increase the drain current or to achieve a further reduction of V DD , it can be properly used either for high speed or for low power. Figure 5 compares the performance of a 48-bit multiplier implemented on a 40-KG gate array for bulk Si and SOI MOSFET with the same off-current [23]. At the same supply voltage, SOI achieves higher speeds and the speed difference becomes more distinct at lower voltages.…”