Recent progress and future prospects of SOI CMOS

Tsuchiya, Toshiaki

doi:10.1002/1520-6432(200010)83:10<24::aid-ecjb4>3.0.co;2-9

Cited by 1 publication

(1 citation statement)

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“…Nevertheless, modern bulk CMOS devices require special processing in order to overcome the problems associated with short-channel effects and the poor isolation between the device and the substrate or crosstalk between neighbour active elements operating at high frequencies [4,5]. In the last few years, silicon-on-insulator (SOI) technology has emerged as the most feasible alternative to conventional silicon devices [6][7][8]. For example, it has been claimed that fullydepleted (FD) SOI MOSFETs provide, as compared to their bulk counterparts, a higher transconductance and reduced hotcarrier effects, together with an exceptional isolation and an easier and cheaper CMOS processing [9].…”

Section: Introductionmentioning

confidence: 99%

A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications

Rengel¹,

Pardo²,

Martín³

2004

Semicond. Sci. Technol.

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We present a Monte Carlo investigation of the dynamic performance of bulk and FD SOI MOSFET devices with one-to-one comparable topologies. The features of the simulator allow us to provide a complete comprehension of the transport phenomena and the main internal quantities that are connected to the small-signal behaviour of the devices at RF and microwave frequencies. In this way, the effect of the buried oxide and the variation of the active layer thickness on the static and dynamic characteristics of FD SOI MOSFETs are readily evaluated, and an exhaustive investigation of the physical basis of the dynamic performance is realized, thus clarifying the underlying differences between bulk and FD SOI transistors that can be used for the optimization of the devices. The parameters of the small-signal equivalent circuit are carefully analysed: important issues, such as the high frequency capacitive coupling to the substrate, the physical meaning of non-quasistatic parameters or the behaviour of figures of merit such as g m , f T and f max are studied in detail. Furthermore, when scattering parameters are evaluated the kink effect in the S 22 parameter at high frequencies has been checked to be much more pronounced in the case of FD SOI devices.

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