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The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 μm spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.

We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%–1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.

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We perform a structural and optical characterization of InAs 1−x N x epilayers grown by molecular beam epitaxy on InAs substrates ͑x Շ 2.2%͒. High-resolution x-ray diffraction ͑HRXRD͒ is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ͑ToF-SIMS͒ measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing ͑BAC͒ model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C NM = 2.0Ϯ 0.1 eV.

We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects.

We report on the epitaxial growth and photoluminescence of InAs 0.926 Sb 0.063 N 0.011 /InAs multi-quantum wells grown using plasma-assisted molecular beam epitaxy. These dilute nitride quantum wells exhibit bright photoluminescence in the midinfrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent photoluminescence behaviour are consistent with a type I band line-up in these quantum wells, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.Confidential: not for distribution.

We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2–4 µm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.