Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range

Mare, M. de la; Carrington, Peter J.; Wheatley, R.G.; Zhuang, Qiandong; Beanland, Richard; Sánchez, Ana; Krier, A.

doi:10.1088/0022-3727/43/34/345103

Cited by 8 publications

(6 citation statements)

References 29 publications

(49 reference statements)

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“…We can also notice weak fluctuations on both sides of the InAs peak in sample (A), which probably originate from the QD layers. In a similar manner to multiple quantum wells [25], the multiple QD layers in our samples would be expected to give periodic peaks on both sides of the InAs peak, as the XRD spectrum of sample (D) shows. However, due to the changing thickness of InAs spacer layers between the InSb QD layers, such periodic features cannot be clearly observed from sample (A), and are absent from samples (B) and (C).…”

Section: X-ray Diffractionmentioning

confidence: 82%

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Zhuang

Marshall

et al. 2014

Semicond. Sci. Technol.

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Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb QDs was observed from each of the samples and was found to be comparable to the PL of InSb QDs grown onto homo-epitaxially deposited InAs. The 4 K PL intensity and linewidth of InSb QDs grown onto a 3 μm thick InAs buffer layer directly deposited onto GaAs proved to be superior to that from QDs grown onto an InAs MBL using either AlSb or GaSb interlayers. Light-emitting diode structures containing ten layers of InSb QD in the active region were subsequently fabricated and electroluminescence from the QDs was obtained in the mid-infrared spectral range up to 180 K. This is the first step towards obtaining mid-infrared InSb QD light sources on GaAs substrates.

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Section: X-ray Diffractionmentioning

confidence: 82%

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Zhuang

Marshall

et al. 2014

Semicond. Sci. Technol.

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“…Simulation of the XRD curve gives the Sb and N contents in the well as 5.0% and 0.8%, respectively, so that the strain in the QW is approximately 0.2%. The band structure at 4 K for the QW is shown in Figure 1(b) using the same calculation procedure as described previously [9]. Three heavy hole and one light hole states are confined.…”

Section: Sample Growth and Fabricationmentioning

confidence: 99%

“…To date there have been no reports of LEDs based on dilute nitride material in the mid-infrared spectral range (λ > 3 μm) due to the difficulty in growing epitaxial material of sufficient quality. Our previous work has concentrated on the development and optimisation of the growth of InAsSbN and from which photoluminescence (PL) was obtained up to 250 K from InAsSbN/InAs MQWs [8,9]. It was found that the surfactant effect of Sb enhances the crystalline quality and PL intensity.…”

Section: Introductionmentioning

confidence: 99%

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Carrington

Mare

Cheetham

et al. 2011

Advances in OptoElectronics

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Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

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“…III-V semiconductors with small amount of nitrogen (socalled dilute nitrides) such as GaNAs, GaInNAs, GaN-AsSb, or InNAs are under great interest of scientists since last decade due to their unusual physical properties [1][2][3] and potential applications in near [1,[4][5][6][7][8][9][10] and midinfrared [11][12][13][14][15] emitters, solar cells [16][17][18][19][20], and saturable absorber mirrors [21][22][23][24][25]. The most interesting feature of dilute nitrides is that the incorporation of small amount of nitrogen into III-V host causes a significant narrowing of the energy gap with the simultaneous reduction in the lattice constant [1].…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

et al. 2014

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In this work, we show the results of low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance (PR) investigations, performed on a series of three Ga 0.64 In 0.34 As 1-x N x /GaAs single quantum wells (SQW) grown by metalorganic vapor phase epitaxy with the nitrogen content of 0, 0.5, and 0.8 %. Comparing the PL and PR data, we show that at low excitation intensity and temperature, the radiative recombination occurs via localizing centers (LCs) in all samples. The excitation intensity-dependent PL measurements combined with theoretical modeling of hopping excitons in this system allow us to provide quantitative information on the disorder parameters describing population of LCs. It has been found that the average energy of LCs increases about two times and simultaneously the number of LCs increases about 10 and 20 times after the incorporation of 0.5 and 0.8 % of nitrogen, respectively. The value of average localization energy e 0 determined for N-containing samples (*6-7 meV) is in the range typical for dilute nitride QWs grown by molecular beam epitaxy (MBE). On the other hand, the ''effective'' concentration of LCs seems to be higher than for GaInNAs/GaAs QW grown by MBE. The dramatic increase in localizing centers also affects the PL dynamics. Observed PL decay time dispersion is much stronger in GaInNAs SQW than in nitrogen-free SQW. The change in PL dynamic is very well reproduced by model of hopping excitons.

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Photoluminescence of InAs_0.926Sb_0.063N_0.011/InAs multi-quantum wells in the mid-infrared spectral range

Cited by 8 publications

References 29 publications

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

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