Properties of dilute InAsN layers grown by liquid phase epitaxy

Dhar, S.; Das, T.D.; Mare, M. de la; Krier, A.

doi:10.1063/1.2975166

Cited by 20 publications

(9 citation statements)

References 22 publications

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“…These measurements showed that the low temperature ͑T = 4.2 K͒ PL emission red shifts from 0.42 eV to about 0.35 eV with increasing x from 0 to 1%, in qualitative agreement with optical data reported previously for InAs 1−x N x epilayers grown on other substrates ͑e.g., InP and InAs͒ or using different growth techniques. [11][12][13]15 A strong and broad PL emission centered at around 0.3 eV was also measured at room temperature ͑T = 300 K͒ in the InAs 1−x N x sample with x =1%. For further details on the PL properties of all samples, see Ref.…”

Section: Samples and Experimentsmentioning

confidence: 81%

“…Interest has focused more recently on narrow energy-gap semiconductors, such as InAs, which has a band gap E g = 0.35 eV at room temperature ͑T = 300 K͒. The incorporation of nitrogen in this compound induces large relative changes of E g , [10][11][12][13][14][15][16][17] thus, making the InAs 1−x N x alloy an attractive alternative to more established materials, such as Hg 1−y Cd y Te, for infrared ͑IR͒ gas sensing and security applications. InAs 1−x N x has proved to be a useful material for fabricating alloys with a photon absorption energy in the IR that can be tuned by the N concentration.…”

Section: Introductionmentioning

confidence: 99%

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Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

et al. 2009

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We report cyclotron resonance ͑CR͒, transverse magnetoresistance ͑MR͒, and Hall effect studies of a series of n-type InAs 1−x N x epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov-de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs 1−x N x . In GaAs 1−x N x electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x ͑ϳ0.1%͒. These phenomena are significantly weaker in InAs 1−x N x due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs 1−x N x the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths ͑l ϳ 100 nm at 2 K͒ and electron mobilities ͑ =6 ϫ 10 3 cm 2 V −1 s −1 at 300 K͒ that remain relatively large even at x =1%.

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Section: Samples and Experimentsmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

et al. 2009

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“…In this work we report on growth from solution using liquid phase epitaxy (LPE), which may offer an alternative route towards the production of high quality dilute nitrides provided that the N can be successfully incorporated. Previously, we have reported LPE growth of InAsN layers on InAs substrates where polycrystalline InN powder was added to the growth melt to supply N during growth [34]. In the present work we report on our attempts to improve on this by using GaN as a source of N instead of InN.…”

Section: Introductionmentioning

confidence: 95%

“…The two peaks located at 461 and 496 cm -1 we attribute to N-In 4 and N-Ga 2 In 2 clusters respectively [48]. The peaks at 413 and 487 cm -1 are related to higher order complexes and have been determined to be due to high order di-nitrogen In-N complexes [34] and doubly degenerate N-Ga 3 In cluster modes [48,49]. Finally, the peak located at 380 cm -1 is tentatively attributed to a gap mode caused by In vacancies [50].…”

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confidence: 99%

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

Mare¹,

Das²,

Das³

et al. 2011

J. Phys. D: Appl. Phys.

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Abstract:Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4-300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behavior and showed an anomalous increase in intensity from 190 K to room temperature. This was due to the formation of a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures < 190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.Confidential: not for distribution.

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“…In particular, an increase in electron and hole effective masses enhances the joined densities of states and then reduces the injected carrier concentration required to reach laser operation in multiquantum well laser diodes. Consequently, several theoretical approaches have been developed to describe dilute-N InAsN electronic and optical properties [7][8][9], and InAsN layers grown on III-V substrates have been reported [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Waveform Analysis of Bilayer Iridium/Gold Superconducting Transition Edge Sensor Microcalorimeter

Damayanthi¹,

Kunieda²,

Zen³

et al. 2006

jjap

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New dilute-nitride InAsN/GaSb laser diodes on an InAs substrate with a 'W' or 'M' design are theoretically investigated using a ten-band k · p model including valence, conduction and nitrogen-induced bands. For these laser diodes, designed to operate at 3.3 μm at room temperature, optical transition matrix elements for TE and TM modes between the valence sub-bands and the conduction sub-bands, modal gain and total threshold current densities are calculated. Under the hypothesis of a total loss coefficient α = 50 cm −1 , non-conventional 'W' and 'M' multiquantum well laser structures present a calculated threshold current density J th lower than 1.1 kA cm −2 .

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Properties of dilute InAsN layers grown by liquid phase epitaxy

Cited by 20 publications

References 22 publications

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

Waveform Analysis of Bilayer Iridium/Gold Superconducting Transition Edge Sensor Microcalorimeter

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