Development of dilute nitride materials for mid-infrared diode lasers

Abstract

The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 μm spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.

Automated numerical characterization of dilute semiconductors per comparison with luminescence

“…An interesting feature of dilute semiconductor material is the anomalous energy emission peaks at low temperatures, following an unusual s-shape behaviour that is associated with disorder and localization effects, which have been seen in both dilute bismides (Mazzucato et al 2014) and nitrides (Krier et al 2012). A simple and efficient method to describe this and other light emission effects in those materials is used here (Oriaku and Pereira 2017), based on analytical solutions for the Photon Green's functions approach Henneberger 1996, 1998;Michler et al 1998), delivering a microscopic, fully quantum mechanical solution.…”

“…Concrete progress requires accurate and simple modelling that can predict optical properties and become a tool for numerical characterization and device design from the ultra-violet to the THz range and Mid Infrared Ranges (Jepsen et al 2013;Gu et al 2014;Krier et al 2012;De la Mare et al 2009;Zhuang et al 2008). Furthermore, understanding the properties of new bulk semiconductors has attracted renewed interest in the solar cell material arena to avoid environmentally unfriendly materials such as Cd (Vidal et al 2010).…”

Simulations of mid infrared emission of InAsN semiconductors

“…from ab initio calculations and has potentials for a major impact in the development of new bulk materials for efficient solar cells and for mid infrared radiation generation and detection. The good agreement between the theory and experimental data for mid infrared emitting dilute nitride structures [3] clearly demonstrates the power and accuracy of the approach.…”

“…‫ܧ‬ ே is the position of the nitrogen impurity level, ܸ ே is the interaction potential and ‫ݔ‬ is the nitrogen composition. For dilute nitride ‫ݏܣ݊ܫ‬ ଵି௫ ܰ ௫ , the following values can be taken for the parameters ܸ = 2.0ܸ݁ [3] and the position of the Nitrogen impurity, ‫ܧ‬ ே = 1.44ܸ݁ [26][27]. The temperature dependent band gap of the host matrix (InAs) follows the Varshni formula [28][29][30];…”

“…Luminescence, absorption and transmission spectra play a major role in the characterization of new materials and optoelectronic devices operating from the THz to the UV ranges [1][2][3][4][5][6][7] In this paper we apply an accurate analytical approximation for luminescence that can be easily programmed and includes the main many body effects required to describe bulk semiconductors. The luminescence is connected to the nonlinear absorption and gain and the expressions delivered reduce exactly to Elliott's formula in the low density limit.…”