A novel approach is presented for a measurement system which is able to investigate the most relevant specifications of microwave circuits and components. This unique test stand is configured for on wafer measurements up to 60 GHz, but can also be used for connectorized device measurements. The main measurement capabilities of the system are: Two and three port scattering parameters, noise figure and noise parameters of two port devices, power and gain measurements including harmonic power and harmonic impedances, all mixer parameters including conversion noise and the cornplete conversion matrix, active load pulling and the spectrum and phase noise of oscillators Furthermore, a new calibration method has been developed which allows the measurement of absolute values of up to three port power waves at the device under test without fiequericy converting standards in the calibration.The system operates in combination w i t h an automatic wafer probe station. In the future the control software for the prober will be integrated in the measurement system software giving the capability of performing wafer mapping of MMIC's e.g..
I . System Description;Fig. 1. IMST combined load pull, mixer and oscillator and S-,parameter measurement stand
A HEMT diode model intended for analog applications should be valid over the whole gatesource voltage (&.) range. The main difficulty of extracting the small-signal equivalent scheme of a HEMT diode, is that, contrary to the transistor extraction method, no clear distinction can be made between the calculation of the extrinsic elements (cold-fet measurements) and the intrinsic elements (hot-fet measurements). This implies that approximations used in the cold-fet extraction approach [l] have to be reviewed. This is in particular a problem for the determination of the resistances.
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