A Combined On-Wafer Measurement Stand for Linear and Nonlinear Microwave Measurements

Roth, B.; Kither, Dietmar; Coady, M.; Sporkmann, T.

doi:10.1109/euma.1994.337336

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…These two error boxes allow the de-embedding of power at on-wafer plane using power meter measurement at the end of the coaxial plane. Roth et al [3] also utilized the same technique of calibration but extended it to three measurement ports. Berghoff et al [4] used a different principle to measure absolute powers in the reference plane by using a double six-port network analyzer and a thru, reflect, line (TRL) calibration technique.…”

Section: Introductionmentioning

confidence: 97%

An impedance and power flow measurement system suitable for on-wafer microwave device large-signal characterization

El-Deeb¹,

Bensmida²,

Boulejfen³

et al. 2010

Int J RF and Microwave Comp Aid Eng

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A reflection based and thru-less de-embedding technique for impedance and absolute power flow measurements suitable for on-wafer large-signal characterization of microwave transistors is proposed. The developed system was tested for both 50 X and non-50 X terminated passive and active devices and the results obtained are compared with those obtained with commercial instruments. V C 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE 20: 306-312, 2010.

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Section: Introductionmentioning

confidence: 97%

An impedance and power flow measurement system suitable for on-wafer microwave device large-signal characterization

El-Deeb¹,

Bensmida²,

Boulejfen³

et al. 2010

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

show abstract

“…Appropriate calibration 0018-9480/98$10.00 © 1998 IEEE methods assure vector corrected measurements at the device's input and output ports. The use of an ANA for multiharmonic measurements requires a frequency converter either in form of an additional device [9] or built-in [4], [17] in order to enable the ANA to measure at harmonic frequencies. In case of a DSPNA which does not need a reference signal, frequency selection can be carried out by switched filters [12] or tunable filters.…”

Section: Introductionmentioning

confidence: 99%

Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

Berghoff

Bergeault

Huyart

et al. 1998

IEEE Trans. Microwave Theory Techn.

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An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at f 0 and 2f 0 (multiharmonic load-pull) and variation of the source impedance at the input port at f 0 (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at f 0 = 2 GHz.

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Cunha

Lima

Teixeira

et al. 2010

Int J RF and Microwave Comp Aid Eng

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A Combined On-Wafer Measurement Stand for Linear and Nonlinear Microwave Measurements

Cited by 6 publications

References 4 publications

An impedance and power flow measurement system suitable for on-wafer microwave device large-signal characterization

An impedance and power flow measurement system suitable for on-wafer microwave device large-signal characterization

Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

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