Large-signal extraction method for GaAs and InP HEMT diodes

Abstract

A HEMT diode model intended for analog applications should be valid over the whole gatesource voltage (&.) range. The main difficulty of extracting the small-signal equivalent scheme of a HEMT diode, is that, contrary to the transistor extraction method, no clear distinction can be made between the calculation of the extrinsic elements (cold-fet measurements) and the intrinsic elements (hot-fet measurements). This implies that approximations used in the cold-fet extraction approach [l] have to be reviewed. This is in particular a problem for the determination of the resistances.