Photoconductivity is observed in ZnO epilayers due to photoexcitation in the visible spectral region of 400-700 nm, below the ZnO bandgap energy of 3.4 eV. Photoconductive transients due to visible photoexcitation have time constants in the order of minutes. Treatment of the ZnO surface with SiO 2 passivation layers results in a significant reduction in the photoconductive signal and photoconductive time constant. The photoconductive response is attributed to hole traps in ZnO, where a rate equation model is presented to describe the photoconductive characteristics. A method of extracting the hole trap density spectrum is presented on the basis of the rate equation model and assumptions for hole capture lifetime and carrier recombination lifetime that are validated by experimental time-resolved photoluminescence measurements of the material under study. Traps are found to be distributed near 0.75 eV and 0.9 eV from the valence band edge for SiO 2 passivated and unpassivated ZnO epilayers, respectively.
A plasmonic heating method for the polymerase chain reaction is demonstrated by the amplification of a section of the human androgen receptor gene. The thermocycler has a simple low-cost design, demonstrates excellent temperature stability and represents the first practical demonstration of plasmonic thermocycling.
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