Perovskite solar cells have achieved photo-conversion efficiencies greater than 20%, making them a promising candidate as an emerging solar cell technology. While perovskite solar cells are expected to eventually compete with existing silicon-based solar cells on the market, their long-term stability has become a major bottleneck. In particular, perovskite films are found to be very sensitive to external factors such as air, UV light, light soaking, thermal stress and others. Among these stressors, light, oxygen and moisture-induced degradation can be slowed by integrating barrier or interface layers within the device architecture. However, the most representative perovskite absorber material, CH3NH3PbI3 (MAPbI3), appears to be thermally unstable even in an inert environment. This poses a substantial challenge for solar cell applications because device temperatures can be over 45 °C higher than ambient temperatures when operating under direct sunlight. Herein, recent advances in resolving thermal stability problems are highlighted through literature review. Moreover, the most recent and promising strategies for overcoming thermal degradation are also summarized.

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Nested multiple-walled coaxial nanotube structures of transition metal oxides, semiconductors, and metals were successfully synthesized by atomic layer deposition (ALD) techniques utilizing nanoporous anodic aluminum oxide (AAO) as templates. In order to fabricate free-standing tube-in-tube nanostructures, successive ALD nanotubes were grown on the interior template walls of the AAO nanochannels. The coaxial nanotubes were alternated by sacrificial spacers of ALD Al(2)O(3), to be chemically removed to release the nanotubes from the AAO template. In this study, we synthesized a novel nanostructure with up to five nested coaxial nanotubes within AAO templates. This synthesis can be extended to fabricate n-times tube-in-tube nanostructures of different materials with applications in multisensors, broadband detectors, nanocapacitors, and photovoltaic cells.

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Lithographically defined microporous templates in conjunction with the atomic layer deposition (ALD) technique enable remarkable control of complex novel nested nanotube structures. So far three-dimensional control of physical process parameters has not been fully realized with high precision resolution, and requires optimization in order to achieve a wider range of potential applications. Furthermore, the combination of composite insulating oxide layers alternating with semiconducting layers and metals can provide various types of novel applications and eventually provide unique and advanced levels of multifunctional nanoscale devices. Semiconducting TiO 2 nanotubes have potential applications in photovoltaic devices. The combination of nanostructured semiconducting materials with nested metal nanotubes has the potential to produce novel multifunctional vertically-ordered three-dimensional nanodevices. Platinum growth by ALD has been explored, covering the initial stages of the thin film nucleation process and the synthesis of high aspect ratio nanotube structures. The penetration depth of the Pt into porous templates having various pore sizes and aspect ratios has been investigated. Several multi-walled nested TiO 2 -Pt nanotubes in series have been successfully fabricated using microporous Si templates. These innovative nested nanostructures have the potential to produce novel multifunctional vertically-ordered three-dimensional nanodevices in photovoltaic and sensing technologies. KEYWORDSAtomic layer deposition (ALD) platinum nanotubes, semiconductor/metal nanotubes, microporous Si templates, nanoporous alumina templates, multilayer nested nanotubes For several decades, the fabrication of nanostructures having highly-ordered, complex architectures has been one of the most interesting research topics. These structures have the potential to advance current technologies and enable the development of newer and more innovative applications of all kinds. In the past few years, vertically-ordered, self-organized nanotubes and nanorods have been synthesized using anodic aluminum oxide (AAO) or silicon (Si) nano/micropore templates. Most coaxial nanotubes currently produced with nanotemplates maintain three-dimensional scales close to those of the original Nano

The impact of the nitridation temperature on sapphire/GaN interface modifications and the structural, chemical, and optical properties of GaN epitaxial thin films with N plasma radicals is investigated. Based on ex situ spectroscopic ellipsometry and x-ray photoelectron spectroscopy analysis, it is found that the sapphire nitridation chemistry, specifically AlN versus oxynitride (NO) production, depends on the surface temperature. Nitridation at 200 °C produces a very thin AlN layer with 90% coverage, while high temperature nitridation leads to a 70% coverage of AlN layer containing NO. These initial stages of growth significantly impact the characteristics of the layers following the nitridation step, specifically the low temperature buffer, annealed buffer, and the GaN epitaxial layer. The annealed buffer on a 200 °C nitridation provides a homogeneous GaN thin layer covering most of the sapphire surface. This homogeneous GaN layer after annealing produces a superior template for subsequent growth, resulting in improved structural and optical properties of GaN epitaxial films. On the other hand, the annealed buffer grown on sapphire nitrided at temperatures lower or higher than 200 °C, has islands of GaN nuclei revealing the sapphire substrate, and ultimately, resulting in degraded GaN epitaxial film quality as demonstrated by photoluminescence and x-ray diffraction measurements. The results can be traced back to the chemistry of the nitridation process.

The free hole carriers in GaN have been limited to concentrations in the low 1018cm−3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5×1019cm−3.

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