We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted

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The effects of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP Schottky diode have been investigated by current–voltage (I–V), capacitance–voltage (C–V), X‐ray diffraction (XRD) and secondary ion‐mass spectroscopy (SIMS) techniques. Results showed that the Schottky barrier height of the as‐deposited Ru/n‐InP has been found to be 0.53 eV (I–V) and 0.69 eV (C–V). The Schottky barrier height increased to 0.54 eV (I–V) 0.73 eV (C–V), 0.56 eV (I–V) and 0.78 eV (C–V) after annealing at 300 and 400 °C for 1 min in nitrogen ambient. Further increase in the annealing temperature up to 500 °C resulted in the increase of barrier height to 0.57 eV (I–V) and 0.80 eV (C–V). However, after annealing at temperature 600 °C, the barrier height decreases to 0.51 eV (I–V) and 0.67 eV (C–V). Based on the results of XRD and SIMS studies, the formation of indium phases at Ru/n‐InP interface could be the reason for the increase of barrier height upon annealing at 500 °C. The atomic force microscopy results showed that the surface morphology of the contact annealed at 600 °C is fairly smooth with a root mean square roughness of 1.8 nm.

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The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (I –V), capacitance–voltage (C –V) and X‐ray diffraction (XRD) measurements. The barrier height of the as‐deposited Pd/Au Schottky contact was found to be 0.46 eV (I –V) and 0.70 eV (C –V) respectively. It is observed that the Schottky barrier height increases with annealing temperature and found maximum values of 0.51 eV (I –V) and 0.92 eV (C –V) annealed at 400 °C for 1 min in the nitrogen atmosphere. However, after annealing the sample at 500 °C resulted in the decrease of barrier height and values are 0.40 eV (I –V) and 0.60 eV (C –V). The AFM results showed that the surface morphology of the contact annealed at 500 °C is fairly smooth with a RMS roughness 1.9 nm. Based on the XRD results, the formation of indium phases at the Pd/Au/n‐InP interface could be the reason for the increase in the Schottky barrier height at 400 °C. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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