Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (111)

Reddy, M. Bhaskar; Kumar, Ashwani; Janardhanam, V.; Reddy, V. Rajagopal; Reddy, P. N.

doi:10.1016/j.cap.2008.10.001

Cited by 44 publications

(21 citation statements)

References 31 publications

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“…The I -V -T data were fitted using the standard thermionic emission equation for current in a Schottky diode to derive a value for the SBH at each temperature at which results were taken. A quasi-linear increase of SBH with temperature was found, in agreement with other reports in the literature [47,48], and is described here with an equation of the form…”

Section: Electrical Characterizationsupporting

confidence: 79%

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The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

Dawson¹,

Feng²,

Penate-Quesada³

et al. 2011

J. Phys. D: Appl. Phys.

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The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation Dawson, P., Feng, L., Penate-Quesada, L., Mitra, J., & Hill, G. (2011 Abstract Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of ∼100 K) in the diode resistance-temperature (R D -T ) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R D -T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs-and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

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Section: Electrical Characterizationsupporting

confidence: 79%

“…The linear dependence of φ B (T ) on temperature, which may be regarded as an empirical means of describing inhomogeneity in the barrier [47,48], was incorporated in the modelling of the R D -T curves. Its inclusion was found to be important in determining the gradient and thus the temperature range of the NDR region.…”

Section: Electrical Characterizationmentioning

confidence: 99%

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

Dawson¹,

Feng²,

Penate-Quesada³

et al. 2011

J. Phys. D: Appl. Phys.

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“…Au, Pt) are present at the interface between a semiconductor and another substantially lower Φ metal contact (e.g. Ti) [51][52][53]. Therefore, the interface dipole mech anism between an incomplete coverage Au film (effectively Au nanoparticles) and WSe 2 could be analogously employed in conjunction with a substantially lower Φ electrode metal (e.g.…”

Section: Aumentioning

confidence: 99%

WSe ₂ -contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions

et al. 2017

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Contact metals (Au, Ir, and Cr) are deposited on bulk WSe 2 under ultra-high vacuum (UHV, 1 × 10 −9 mbar) and high vacuum (HV, 5 × 10 −6 mbar) conditions and subsequently characterized with x-ray photoelectron spectroscopy (XPS) to elucidate the effects of reactor base pressure on resulting interface chemistry, contact chemistry, and band alignment. Au forms a van der Waals interface with WSe 2 regardless of deposition chamber ambient. In contrast, Ir and Cr form a covalent interface by reducing WSe 2 to form interfacial metal selenides. When Cr is deposited under HV conditions, significant oxygen incorporation is observed resulting in the thermodynamically favorable formation of tungsten oxyselenide and a substantial concentration of Cr x O y . Regardless of contact metal, WO x (2.63 < x < 2.92) forms during deposition under HV conditions which may positively affect interface transport properties. Cr and Ir form unexpectedly large electron and hole Schottky barriers, respectively, when deposited under UHV conditions due to interfacial reactions that contribute to anomalous band alignment. These results reveal the true interface chemistry formed between metals and WSe 2 under UHV and HV conditions and demonstrate the impact on the Fermi level position following contact formation on WSe 2 . PAPEROriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

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“…Recently, the effect of the thin interfacial layer in the MS contacts on the barrier modification and ideality properties have been studied experimentally [31][32][33][34][35][36][37][38]. The ideality factor value greater than unity may has originated from the interface states in equilibrium with the semiconductor, interface dipoles due to interface doping or specific interface structure as well as fabrication-induced defects at the interface.…”

Section: Resultsmentioning

confidence: 99%

Electrical characterization of a-Si:H(n)/c-Si(p) structure

Kavasoğlu

Birgi

Kavasoğlu

et al. 2011

Journal of Alloys and Compounds

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Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (111)

Cited by 44 publications

References 31 publications

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

WSe ₂ -contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions

Electrical characterization of a-Si:H(n)/c-Si(p) structure

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Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (111)

Cited by 44 publications

References 31 publications

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation

WSe 2 -contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions

Electrical characterization of a-Si:H(n)/c-Si(p) structure

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Product

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WSe ₂ -contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions