Electrical characterization of a-Si:H(n)/c-Si(p) structure

Kavasoğlu, A. Sertap; Birgi, Ozcan; Kavasoğlu, Neşe; Oylumluoglu, Gorkem; Kodolbaş, Alp Osman; Kangi, Rifat; Yilmaz, Okan

doi:10.1016/j.jallcom.2011.07.044

Cited by 9 publications

(3 citation statements)

References 43 publications

(125 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…and capacitance-voltage measurements of the resulting diodes. Diode parameters evaluated include the ideality factor, rectification factor, reverse saturation current, and film carrier concentration [26][27][28]…”

Section: Accepted Manuscriptmentioning

confidence: 99%

See 1 more Smart Citation

In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition

et al. 2016

View full text Add to dashboard Cite

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 10 5 , an ideality factor < 2, and a reverse saturation current ~10-8 A. The carrier concentration in the CdTe film was in the range of ~10 15 cm-3 , as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

show abstract

Section: Accepted Manuscriptmentioning

confidence: 99%

“…additional mechanism transport, non-ideal contacts behavior, defects on the interfaces or in the bulk increase the ideality factor value [26,27,29]. Therefore, the ideality factor for optimized diodes has to be as close as possible to 1.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Among these junctions, p-n junctions made of oxides are expected to work at a high temperature and cause much attention [1][2][3][4][5]. Reports show that Nb-doped SrTiO 3 single crystal behaves like a metal, suggesting that NSTO is a degenerate n-type semiconductor with a band gap of 3.2 eV [6].…”

Section: Introductionmentioning

confidence: 99%