Effect of atomic bonding configuration on optical properties of a-Si1−xCx:H thin film

Han, Jiali; Li, Xiang; Xu, Gang; Ren, Zhaohui; Shen, Ge; Han, Gaorong

doi:10.1016/j.jallcom.2013.01.078

Cited by 3 publications

(1 citation statement)

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“…They offer many potential applications in many kinds of optoelectronic devices, such as solar cells [2][3][4], temperature and gas sensors [5,6], protective coatings [1] full-color electroluminescent display [7], and light emitting diodes [5,[8][9]. By varying the carbon concentrations in a-SiC films, the optical gap (Eg) can be continuously tuned in a wide range, which makes it useful for devices design and performances [10], and thus the electrical and optical properties can be manipulated to better suit the application in photovoltaic heterojunction devices [8,11]. After deposition by d.c. magnetron sputtering, the films are generally amorphous and can be transformed into the crystalline state by annealing at elevated temperatures (>1200°C) in an argon atmosphere, which may also improve the a-SiC:H quality [4,10].…”

Section: Introductionmentioning

confidence: 99%

SIMS and auger investigation of thin a-SiC and a-SiC:H films by Up-Down sputtering DC magnetron, impact on optical properties

Ouadfel

Keffous

Cheriet

et al. 2014

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)

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This article deals with an early growth study of hydrogenated and non-hydrogenated amorphous silicon carbide thin films (a-SiC:H, a-SiC). Sample have been elaborated at room temperature by a new configuration (Up-down) sputtering d.c. magnetron technique, using a 6H-SiC polycrystalline target onto p-Si(100) and glass substrates. The infrared spectra reveal the existence of a band located at 740 cm -1 , which corresponds to Si-C stretching mode of amorphous silicon carbide. The SIMS and AES profiles show a c-face for both a-SiC:H and a-SiC. Films elaborated with this configuration (Up-down) are stoichiometric, with a ratio 28 Si/ 12 C = 0.95, compared to the one elaborated with conventional configuration (Down-up), which is 1.75. The optical gap is 1.84 eV and 1.48 eV for a-SiC: H and aSiC respectively. This behavior of optical gap may be related to the hydrogen concentration present in the films or other impurities inducing such a decrease in optical gap.

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