The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP

Reddy, M. Bhaskar; Janardhanam, V.; Kumar, Ashwani; Reddy, V. Rajagopal; Reddy, P. N.; Choi, Chel‐Jong; Jung, Ranju; Hur, Sung Hoi

doi:10.1007/s10854-009-9996-y

Cited by 5 publications

(5 citation statements)

References 20 publications

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“…The I – V curve of the device shows a rectification effect ( Figure 2 a,b ), indicating a typical Schottky contact formed between InP NW and Pt. [ 25 ] A photovoltaic effect was observed under the light illumination from a solar simulator with a short circuit current ( I SC ) of 136 nA and an open circuit voltage ( V OC ) of 80 mV, which was the foundation of further self‐powered sensing operation [ 26 ] with the I SC acting as the self‐powered sensing signal.…”

Section: Methodsmentioning

confidence: 99%

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Wei,

Li,

Murugappan

et al. 2024

Advanced Science

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Diabetic ketoacidosis (DKA) is a life‐threatening acute complication of diabetes characterized by the accumulation of ketone bodies in the blood. Breath acetone, a ketone, directly correlates with blood ketones. Therefore, monitoring breath acetone can significantly enhance the safety and efficacy of diabetes care. In this work, the design and fabrication of an InP/Pt/chitosan nanowire array‐based chemiresistive acetone sensor is reported. By incorporation of chitosan as a surface‐functional layer and a Pt Schottky contact for efficient charge transfer processes and photovoltaic effect, self‐powered, highly selective acetone sensing is achieved. The sensor has exhibited an ultra‐wide acetone detection range from sub‐ppb to >100 000 ppm level at room temperature, covering those in the exhaled breath from healthy individuals (300–800 ppb) to people at high risk of DKA (>75 ppm). The nanowire sensor has also been successfully integrated into a handheld breath testing prototype, the Ketowhistle, which can successfully detect different ranges of acetone concentrations in simulated breath samples. The Ketowhistle demonstrates the immediate potential for non‐invasive ketone monitoring for people living with diabetes, in particular for DKA prevention.

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Section: Methodsmentioning

confidence: 99%

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Wei,

Li,

Murugappan

et al. 2024

Advanced Science

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“…The efforts have been made to improve Schottky barrier heights by several research groups [4][5][6][7][8][9][10][11][12]. For example, Eftekhari [4] investigated the effect of rapid thermal annealing (RTA) on the electrical properties of Ni and Pd contacts on n-InP.…”

Section: Introductionmentioning

confidence: 99%

“…Cetin and Ayyildiz [5] prepared Au, Al and Cu Schottky contacts on InP surfaces and studied the influence of the air-grown oxide on the electrical performance. Bhaskar Reddy et al [6] studied the influence of rapid thermal annealing (RTA) on the electrical and structural properties of Pt/Au Schottky contacts to n-InP. They reported that the maximum barrier height was obtained (0.51 eV (I-V)/0.89 eV (C-V)) for the contact annealed at 300°C.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Reddy¹,

Padmasuvarna

Narasappa

et al. 2015

Superlattices and Microstructures

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“…Several metal schemes have been used to form Schottky contacts to n‐type InP in the past 8–20. Some of them were thermally treated and the effects of annealing were studied.…”

Section: Introductionmentioning

confidence: 99%

“…Cetin and Ayyildiz 14 fabricated Au, Al and Cu Schottky diodes on InP surfaces and investigated the influence of the air‐grown oxide on the electrical performance. Bhaskar Reddy et al 15 studied the influence of rapid thermal annealing (RTA) on electrical and structural properties of Pt/Au Schottky contacts to n‐InP and they reported that the maximum barrier height was found to be 0.51 eV [current–voltage ( I – V )] and 0.89 eV [capacitance–voltage ( C – V )] for the contact annealed at 300 °C. They found that the formation of intermetallic compounds at the interface may be the reason for the increase of barrier height after annealing at 300 °C.…”

Section: Introductionmentioning

confidence: 99%

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n‐type InP

Reddy

Naik

et al. 2011

Physica Status Solidi (a)

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We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measurements. Measurements showed that barrier height of as‐deposited Pt/Ti Schottky contact is 0.62 eV (I–V) and 0.76 eV (C–V). Experimental results indicate that high‐quality Schottky contact with barrier height and ideality factor of 0.66 eV (I–V), 0.80 eV (C–V), and 1.14 can be achieved after annealing at 400 °C for 1 min in N2 atmosphere. Further, it is observed that the barrier height slightly decreases to 0.55 eV (I–V) and 0.71 eV (C–V) after annealing at 500 °C. Norde method is also employed to calculate the barrier height of Pt/Ti Schottky contacts. The obtained values are in good agreement with those obtained by I–V measurements. These results indicate that the optimum annealing temperature for the Pt/Ti Schottky contact is 400 °C. According to AES and XRD analysis, the formation of indium phases at the Pt/Ti/n‐InP interface could be the reason for the increase of Schottky barrier height (SBH) after annealing at 400 °C. Results also showed the formation of phosphide phases at the interface. This may be the reason for the decrease in the barrier height after annealing at 500 °C. The AFM results showed that the overall surface morphology of Pt/Ti Schottky contact is reasonably smooth.

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The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP

Cited by 5 publications

References 20 publications

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n‐type InP

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